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Activation and defect dissolution of non-amorphizing, elevated temperature Si<sup>+</sup> implants into In<inf>0.53</inf>Ga<inf>0.47</inf>As

contributor authorLind, A.G.
contributor authorJones, K.S.
contributor authorHatem, C.
date accessioned2020-03-12T21:23:24Z
date available2020-03-12T21:23:24Z
date issued2014
identifier other6939962.pdf
identifier urihttp://libsearch.um.ac.ir:80/fum/handle/fum/1047385?show=full
formatgeneral
languageEnglish
publisherIEEE
titleActivation and defect dissolution of non-amorphizing, elevated temperature Si<sup>+</sup> implants into In<inf>0.53</inf>Ga<inf>0.47</inf>As
typeConference Paper
contenttypeMetadata Only
identifier padid8176517
subject keywordsGames
subject keywordsInterference
subject keywordsMultimedia communication
subject keywordsPerformance evaluation
subject keywordsPower control
subject keywordsSignal to noise ratio
subject keywordsWireless communication
subject keywordsDevice-to-device (D2D)
subject keywordsgame theory
subject keywordspower control
subject keywordssource selection
subject keywordswireless multimedia communications
identifier doi10.1109/GLOCOM.2014.7037528
journal titleon Implantation Technology (IIT), 2014 20th International Conference on
filesize689306
citations0


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