0.5V operation and performance of nonvolatile SRAM cell based on pseudo-spin-FinFET architecture
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سال
: 2014شناسه الکترونیک: 10.1109/ICMLC.2014.7009725
کلیدواژه(گان): Abstracts,Attitude control,Azimuth,Gold,Irrigation,Transmission line measurements,Intelligent control,PID control,SOCM,TRMS
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0.5V operation and performance of nonvolatile SRAM cell based on pseudo-spin-FinFET architecture
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contributor author | Shuto, Y. | |
contributor author | Yamamoto, S. | |
contributor author | Sugahara, S. | |
date accessioned | 2020-03-12T21:15:35Z | |
date available | 2020-03-12T21:15:35Z | |
date issued | 2014 | |
identifier other | 6931624.pdf | |
identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1042582 | |
format | general | |
language | English | |
publisher | IEEE | |
title | 0.5V operation and performance of nonvolatile SRAM cell based on pseudo-spin-FinFET architecture | |
type | Conference Paper | |
contenttype | Metadata Only | |
identifier padid | 8170315 | |
subject keywords | Abstracts | |
subject keywords | Attitude control | |
subject keywords | Azimuth | |
subject keywords | Gold | |
subject keywords | Irrigation | |
subject keywords | Transmission line measurements | |
subject keywords | Intelligent control | |
subject keywords | PID control | |
subject keywords | SOCM | |
subject keywords | TRMS | |
identifier doi | 10.1109/ICMLC.2014.7009725 | |
journal title | imulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on | |
filesize | 760637 | |
citations | 0 |