Multi-sensor fusion for robust autonomous flight in indoor and outdoor environments with a rotorcraft MAV
ناشر:
سال
: 2014شناسه الکترونیک: 10.1109/SOCC.2014.6948971
کلیدواژه(گان): CMOS memory circuits,MOSFET circuits,SRAM chips,logic design,6T SRAM cells,8T-SRAM cells,CMOS devices,FinFET devices,FinFET-based SRAM,SRAM design perspective,bulk CMOS technologies,bulk CMOS-based SRAM cells,device parameters,leakage power consumption,nanoscale regimes,process variations,read static noise margin,size 22 nm,supply voltage,write margin,CMOS integrated circuits,FinFETs,Logic gates,Power demand,SRAM cells,Threshold voltage,CMOS,FinFET,SRAM
کالکشن
:
-
آمار بازدید
Multi-sensor fusion for robust autonomous flight in indoor and outdoor environments with a rotorcraft MAV
Show full item record
| date accessioned | 2020-03-12T20:48:51Z | |
| date available | 2020-03-12T20:48:51Z | |
| date issued | 2014 | |
| identifier other | 6907588.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1026452?locale-attribute=fa | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Multi-sensor fusion for robust autonomous flight in indoor and outdoor environments with a rotorcraft MAV | |
| type | Conference Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8151490 | |
| subject keywords | CMOS memory circuits | |
| subject keywords | MOSFET circuits | |
| subject keywords | SRAM chips | |
| subject keywords | logic design | |
| subject keywords | 6T SRAM cells | |
| subject keywords | 8T-SRAM cells | |
| subject keywords | CMOS devices | |
| subject keywords | FinFET devices | |
| subject keywords | FinFET-based SRAM | |
| subject keywords | SRAM design perspective | |
| subject keywords | bulk CMOS technologies | |
| subject keywords | bulk CMOS-based SRAM cells | |
| subject keywords | device parameters | |
| subject keywords | leakage power consumption | |
| subject keywords | nanoscale regimes | |
| subject keywords | process variations | |
| subject keywords | read static noise margin | |
| subject keywords | size 22 nm | |
| subject keywords | supply voltage | |
| subject keywords | write margin | |
| subject keywords | CMOS integrated circuits | |
| subject keywords | FinFETs | |
| subject keywords | Logic gates | |
| subject keywords | Power demand | |
| subject keywords | SRAM cells | |
| subject keywords | Threshold voltage | |
| subject keywords | CMOS | |
| subject keywords | FinFET | |
| subject keywords | SRAM | |
| identifier doi | 10.1109/SOCC.2014.6948971 | |
| journal title | obotics and Automation (ICRA), 2014 IEEE International Conference on | |
| filesize | 2253215 | |
| citations | 0 | |
| contributor rawauthor | Shaojie Shen , Mulgaonkar, Y. , Michael, N. , Kumar, V. |