Arsenic atomic layer doping in Si using AsH<inf>3</inf>
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سال
: 2014شناسه الکترونیک: 10.1109/ICACCI.2014.6968223
کلیدواژه(گان): Band-pass filters,Cutoff frequency,Field programmable gate arrays,Finite impulse response filters,Hardware,MATLAB,FIR Filters,FPGA,Signal Processing,Tunable Filters
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Arsenic atomic layer doping in Si using AsH<inf>3</inf>
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date accessioned | 2020-03-12T20:30:13Z | |
date available | 2020-03-12T20:30:13Z | |
date issued | 2014 | |
identifier other | 6874638.pdf | |
identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1016749 | |
format | general | |
language | English | |
publisher | IEEE | |
title | Arsenic atomic layer doping in Si using AsH<inf>3</inf> | |
type | Conference Paper | |
contenttype | Metadata Only | |
identifier padid | 8140664 | |
subject keywords | Band-pass filters | |
subject keywords | Cutoff frequency | |
subject keywords | Field programmable gate arrays | |
subject keywords | Finite impulse response filters | |
subject keywords | Hardware | |
subject keywords | MATLAB | |
subject keywords | FIR Filters | |
subject keywords | FPGA | |
subject keywords | Signal Processing | |
subject keywords | Tunable Filters | |
identifier doi | 10.1109/ICACCI.2014.6968223 | |
journal title | ilicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International | |
filesize | 120946 | |
citations | 0 | |
contributor rawauthor | Yamamoto, Y. , Kurps, R. , Murota, J. , Tillack, B. |