Output feedback tracking control for spacecraft relative translation subject to input constraints and partial loss of control effectiveness
ناشر:
سال
: 2014شناسه الکترونیک: 10.1109/ESSDERC.2014.6948772
کلیدواژه(گان): III-V semiconductors,field effect transistors,indium compounds,nanowires,silicon,tight-binding calculations,tunnel transistors,InAs-Si,InAs-Si heterojunction nanowire tunnel FET,TCAD tool,WKB approximation,atomistic quantum transport,bulk-like nanowire TFET,drift-diffusion,extreme confinement,extremely narrow TFET,p-type InAs-Si nanowire TFET,tight-binding model,ultra-scaled InAs-Si nanowire TFET,Approximation methods,Dispersion,Logic gates,Semiconductor device modeling,Si
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آمار بازدید
Output feedback tracking control for spacecraft relative translation subject to input constraints and partial loss of control effectiveness
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| contributor author | Lin Zhao , Yingmin Jia , Junping Du , Jun Zhang | |
| date accessioned | 2020-03-12T20:13:42Z | |
| date available | 2020-03-12T20:13:42Z | |
| date issued | 2014 | |
| identifier other | 6858670.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1006671 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Output feedback tracking control for spacecraft relative translation subject to input constraints and partial loss of control effectiveness | |
| type | Conference Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8128231 | |
| subject keywords | III-V semiconductors | |
| subject keywords | field effect transistors | |
| subject keywords | indium compounds | |
| subject keywords | nanowires | |
| subject keywords | silicon | |
| subject keywords | tight-binding calculations | |
| subject keywords | tunnel transistors | |
| subject keywords | InAs-Si | |
| subject keywords | InAs-Si heterojunction nanowire tunnel FET | |
| subject keywords | TCAD tool | |
| subject keywords | WKB approximation | |
| subject keywords | atomistic quantum transport | |
| subject keywords | bulk-like nanowire TFET | |
| subject keywords | drift-diffusion | |
| subject keywords | extreme confinement | |
| subject keywords | extremely narrow TFET | |
| subject keywords | p-type InAs-Si nanowire TFET | |
| subject keywords | tight-binding model | |
| subject keywords | ultra-scaled InAs-Si nanowire TFET | |
| subject keywords | Approximation methods | |
| subject keywords | Dispersion | |
| subject keywords | Logic gates | |
| subject keywords | Semiconductor device modeling | |
| subject keywords | Si | |
| identifier doi | 10.1109/ESSDERC.2014.6948772 | |
| journal title | merican Control Conference (ACC), 2014 | |
| filesize | 385712 | |
| citations | 0 |