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12W/mm with 0.15µm InAlN/GaN HEMTs on SiC technology for K and Ka-Bands applications

Author:
Piotrowicz, S. , Jardel, O. , Chartier, E. , Aubry, R. , Baczkowski, L. , Casbon, M. , Dua, C. , Escotte, L. , Gamarra, P. , Jacquet, J.C. , Michel, N. , Nsele, S.D. , Oualli, M. , Patard, O. , Potier, C. , Di-Forte Poisson, M.A. , Delage, S.L.
Publisher:
IEEE
Year
: 2014
DOI: 10.1109/EWDTS.2014.7027084
URI: http://libsearch.um.ac.ir:80/fum/handle/fum/1000068
Keyword(s): Algorithm design and analysis,Educational institutions,Genetic algorithms,Search problems,Sociology,Statistics,Very large scale integration
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    12W/mm with 0.15µm InAlN/GaN HEMTs on SiC technology for K and Ka-Bands applications

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date accessioned2020-03-12T20:03:15Z
date available2020-03-12T20:03:15Z
date issued2014
identifier other6848347.pdf
identifier urihttp://libsearch.um.ac.ir:80/fum/handle/fum/1000068
formatgeneral
languageEnglish
publisherIEEE
title12W/mm with 0.15µm InAlN/GaN HEMTs on SiC technology for K and Ka-Bands applications
typeConference Paper
contenttypeMetadata Only
identifier padid8120559
subject keywordsAlgorithm design and analysis
subject keywordsEducational institutions
subject keywordsGenetic algorithms
subject keywordsSearch problems
subject keywordsSociology
subject keywordsStatistics
subject keywordsVery large scale integration
identifier doi10.1109/EWDTS.2014.7027084
journal titleicrowave Symposium (IMS), 2014 IEEE MTT-S International
filesize787861
citations0
contributor rawauthorPiotrowicz, S. , Jardel, O. , Chartier, E. , Aubry, R. , Baczkowski, L. , Casbon, M. , Dua, C. , Escotte, L. , Gamarra, P. , Jacquet, J.C. , Michel, N. , Nsele, S.D. , Oualli, M. , Patard, O. , Potier, C. , Di-Forte Poisson, M.A. , Delage, S.L.
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