12W/mm with 0.15µm InAlN/GaN HEMTs on SiC technology for K and Ka-Bands applications
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سال
: 2014شناسه الکترونیک: 10.1109/EWDTS.2014.7027084
کلیدواژه(گان): Algorithm design and analysis,Educational institutions,Genetic algorithms,Search problems,Sociology,Statistics,Very large scale integration
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12W/mm with 0.15µm InAlN/GaN HEMTs on SiC technology for K and Ka-Bands applications
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date accessioned | 2020-03-12T20:03:15Z | |
date available | 2020-03-12T20:03:15Z | |
date issued | 2014 | |
identifier other | 6848347.pdf | |
identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1000068 | |
format | general | |
language | English | |
publisher | IEEE | |
title | 12W/mm with 0.15µm InAlN/GaN HEMTs on SiC technology for K and Ka-Bands applications | |
type | Conference Paper | |
contenttype | Metadata Only | |
identifier padid | 8120559 | |
subject keywords | Algorithm design and analysis | |
subject keywords | Educational institutions | |
subject keywords | Genetic algorithms | |
subject keywords | Search problems | |
subject keywords | Sociology | |
subject keywords | Statistics | |
subject keywords | Very large scale integration | |
identifier doi | 10.1109/EWDTS.2014.7027084 | |
journal title | icrowave Symposium (IMS), 2014 IEEE MTT-S International | |
filesize | 787861 | |
citations | 0 | |
contributor rawauthor | Piotrowicz, S. , Jardel, O. , Chartier, E. , Aubry, R. , Baczkowski, L. , Casbon, M. , Dua, C. , Escotte, L. , Gamarra, P. , Jacquet, J.C. , Michel, N. , Nsele, S.D. , Oualli, M. , Patard, O. , Potier, C. , Di-Forte Poisson, M.A. , Delage, S.L. |