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[IEEE 2013 IEEE International Reliability Physics Symposium (IRPS) - Monterey, CA, USA (2013.04.14-2013.04.18)] 2013 IEEE International Reliability Physics Symposium (IRPS) - Reliability of graphene interconnects and n-type doping of carbon nanotube transistors

نوع: Journal Paper

نویسنده : Liyanage, Luckshitha Suriyasena; Chen, Xiangyu; Wei, Hai; Chen, Hong-Yu; Mitra, Subhasish; Wong, H. -S. Philip

سال: 2013

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Improved Performance of Bottom-Contact Organic Thin-Film Transistor Using Al Doped HfO<sub>2</sub> Gate Dielectric

نوع: Journal Paper

نویسنده : Wing Man Tang; Aboudi, Uraib; Provine, J.; Howe, R.T.; Wong, H.-S Philip

ناشر: IEEE

سال: 2014

Sensor-to-Digital Interface Built Entirely With Carbon Nanotube FETs

نوع: Journal Paper

نویسنده : Shulaker, Max M.; Van Rethy, J.; Hills, Gage; Hai Wei; Hong-Yu Chen; Gielen, G.; Wong, H.-S Philip; Mitra, Subhasish

ناشر: IEEE

سال: 2014

Monolithic 3D integration advances and challenges: From technology to system levels

نوع: Conference Paper

نویسنده : Ebrahimi, Mohammad Sadegh; Hills, Gage; Sabry, Mohamed M.; Shulaker, Max M.; Wei, Hai; Wu, Tony F.; Mitra, Subhasish; Wong, H.-S.Philip

ناشر: IEEE

سال: 2014

3-D Cross-Point Array Operation on <inline-formula> <img src="/images/tex/21654.gif" alt="{\\rm AlO}_{y}/{\\rm HfO}_{x}"> </inline-formula>-Based Vertical Resistive Switching Memory

نوع: Journal Paper

نویسنده : Bin Gao; Bing Chen; Rui Liu; Feifei Zhang; Peng Huang; Lifeng Liu; Xiaoyan Liu; Jinfeng Kang; Hong-Yu Chen; Shimeng Yu; Wong, H.-S Philip

ناشر: IEEE

سال: 2014

The Role of Ti Capping Layer in HfO<sub><italic>x</italic></sub>-Based RRAM Devices

نوع: Journal Paper

نویسنده : Zheng Fang; Xin Peng Wang; Joon Sohn; Bao Bin Weng; Zhi Ping Zhang; Zhi Xian Chen; Yan Zhe Tang; Guo-Qiang Lo; Provine, J.; Wong, S. Simon; Wong, H.-S Philip; Dim-Lee Kwong

ناشر: IEEE

سال: 2014

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[IEEE 2013 IEEE International Reliability Physics Symposium (IRPS) - Monterey, CA, USA (2013.04.14-2013.04.18)] 2013 IEEE International Reliability Physics Symposium (IRPS) - Reliability of graphene interconnects and n-type doping of carbon nanotube transistors

Improved Performance of Bottom-Contact Organic Thin-Film Transistor Using Al Doped HfO<sub>2</sub> Gate Dielectric

Sensor-to-Digital Interface Built Entirely With Carbon Nanotube FETs

Monolithic 3D integration advances and challenges: From technology to system levels

3-D Cross-Point Array Operation on <inline-formula> <img src="/images/tex/21654.gif" alt="{\\rm AlO}_{y}/{\\rm HfO}_{x}"> </inline-formula>-Based Vertical Resistive Switching Memory

The Role of Ti Capping Layer in HfO<sub><italic>x</italic></sub>-Based RRAM Devices

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[IEEE 2013 IEEE International Reliability Physics Symposium (IRPS) - Monterey, CA, USA (2013.04.14-2013.04.18)] 2013 IEEE International Reliability Physics Symposium (IRPS) - Reliability of graphene interconnects and n-type doping of carbon nanotube transistors

Improved Performance of Bottom-Contact Organic Thin-Film Transistor Using Al Doped HfO<sub>2</sub> Gate Dielectric

Sensor-to-Digital Interface Built Entirely With Carbon Nanotube FETs

Monolithic 3D integration advances and challenges: From technology to system levels

3-D Cross-Point Array Operation on <inline-formula> <img src="/images/tex/21654.gif" alt="{\\rm AlO}_{y}/{\\rm HfO}_{x}"> </inline-formula>-Based Vertical Resistive Switching Memory

The Role of Ti Capping Layer in HfO<sub><italic>x</italic></sub>-Based RRAM Devices