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Backscattering characteristics of persistent scatterers extracted from PALSAR data
Publisher: IEEE
Year: 2014
Dependence of Ti/C ratio on Ohmic contact with tic electrode for AlGaN/GaN structure
Publisher: IEEE
Year: 2014
Gate Technology Contributions to Collapse of Drain Current in AlGaN/GaN Schottky HEMT
Publisher: IEEE
Year: 2014
Passivation of SiO<inf>2</inf>/SiC interface with La<inf>2</inf>O<inf>3</inf> capped oxidation
Publisher: IEEE
Year: 2014