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[IEEE MELECON 2008 - 2008 IEEE Mediterranean Electrotechnical Conference - Ajaccio, France (2008.05.5-2008.05.7)] MELECON 2008 - The 14th IEEE Mediterranean Electrotechnical Conference - Analytical model for a tunnel field-effect transistor

نوع: Journal Paper

نویسنده : Vandenberghe, William G.; Verhulst, Anne S.; Groeseneken, Guido; Soree, Bart; Magnus, Wim

سال: 2008

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Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor

نوع: Journal Paper

نویسنده : Verhulst, Anne S.; SoreÌ e, Bart; Leonelli, Daniele; Vandenberghe, William G.; Groeseneken, Guido

سال: 2010

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Performance Enhancement in Multi Gate Tunneling Field Effect Transistors by Scaling the Fin-Width

نوع: Journal Paper

نویسنده : Leonelli, Daniele; Vandooren, Anne; Rooyackers, Rita; Verhulst, Anne S.; Gendt, Stefan De; Heyns, Marc M.; Groeseneken, Guido

سال: 2010

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Fabrication and Analysis of a <formula formulatype="inline"> <img src="/images/tex/21408.gif" alt="{\\rm Si}/{\\rm Si}_{0.55}{\\rm Ge}_{0.45}"> </formula> Heterojunction Line Tunnel FET

نوع: Journal Paper

نویسنده : Walke, Amey Mahadev; Vandooren, A.; Rooyackers, R.; Leonelli, Daniele; Hikavyy, Andriy; Loo, Roger; Verhulst, Anne S.; Kuo-Hsing Kao; Huyghebaert, Cedric; Groeseneken, Guido; Rao, Valipe Ramgopal; Bhuwalka, Krishna K.; Heyns, M.M.; Collaert, Nadine; Thean, Aaron Voon-Yew

ناشر: IEEE

سال: 2014

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[IEEE MELECON 2008 - 2008 IEEE Mediterranean Electrotechnical Conference - Ajaccio, France (2008.05.5-2008.05.7)] MELECON 2008 - The 14th IEEE Mediterranean Electrotechnical Conference - Analytical model for a tunnel field-effect transistor

Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor

Performance Enhancement in Multi Gate Tunneling Field Effect Transistors by Scaling the Fin-Width

Fabrication and Analysis of a <formula formulatype="inline"> <img src="/images/tex/21408.gif" alt="{\\rm Si}/{\\rm Si}_{0.55}{\\rm Ge}_{0.45}"> </formula> Heterojunction Line Tunnel FET

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[IEEE MELECON 2008 - 2008 IEEE Mediterranean Electrotechnical Conference - Ajaccio, France (2008.05.5-2008.05.7)] MELECON 2008 - The 14th IEEE Mediterranean Electrotechnical Conference - Analytical model for a tunnel field-effect transistor

Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor

Performance Enhancement in Multi Gate Tunneling Field Effect Transistors by Scaling the Fin-Width

Fabrication and Analysis of a <formula formulatype="inline"> <img src="/images/tex/21408.gif" alt="{\\rm Si}/{\\rm Si}_{0.55}{\\rm Ge}_{0.45}"> </formula> Heterojunction Line Tunnel FET