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نمایش تعداد 1-5 از 5

Monolithic Integration of E/D-Mode AlGaN/GaN MIS-HEMTs

نوع: Journal Paper

نویسنده : Yuechan Kong; Jianjun Zhou; Cen Kong; Youtao Zhang; Xun Dong; Haiyan Lu; Tangsheng Chen; Naibin Yang

ناشر: IEEE

سال: 2014

Low insertion loss GHz GaN SAW device fabricated on self-standing GaN substrate

نوع: Conference Paper

نویسنده : Jianjun Zhou; Liang Li; Haiyan Lu; Cen Kong; Yuechan Kong; Tangsheng Chen; Chen Chen; Xiaoyu Wang; Haodong Wu

ناشر: IEEE

سال: 2014

An Electrothermal Model for Empirical Large- Signal Modeling of AlGaN/GaN HEMTs Including Self-Heating and Ambient Temperature Effects

نوع: Journal Paper

نویسنده : Changsi Wang; Yuehang Xu; Xuming Yu; Chunjiang Ren; Zhensheng Wang; Haiyan Lu; Tangsheng Chen; Bin Zhang; Ruimin Xu

ناشر: IEEE

سال: 2014

A Scalable Large-Signal Multiharmonic Model of AlGaN/GaN HEMTs and Its Application in C-Band High Power Amplifier MMIC

نوع: Journal Paper

نویسنده : Yuehang Xu; Changsi Wang; Huan Sun; Zhang Wen; Yunqiu Wu; Ruimin Xu; Xuming Yu; Chunjiang Ren; Zhensheng Wang; Bin Zhang; Tangsheng Chen; Tao Gao

سال: 2017

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Positive Shift in Threshold Voltage Induced by CuO and NiOx Gate in AlGaN/GaN HEMTs

نوع: Journal Paper

نویسنده : Yi Li; Yaxiong Guo; Kai Zhang; Xuming Zou; Jingli Wang; Yuechan Kong; Tangsheng Chen; Changzhong Jiang; Guojia Fang; Chuansheng Liu; Lei Liao

سال: 2017

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Monolithic Integration of E/D-Mode AlGaN/GaN MIS-HEMTs

Low insertion loss GHz GaN SAW device fabricated on self-standing GaN substrate

An Electrothermal Model for Empirical Large- Signal Modeling of AlGaN/GaN HEMTs Including Self-Heating and Ambient Temperature Effects

A Scalable Large-Signal Multiharmonic Model of AlGaN/GaN HEMTs and Its Application in C-Band High Power Amplifier MMIC

Positive Shift in Threshold Voltage Induced by CuO and NiOx Gate in AlGaN/GaN HEMTs

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Monolithic Integration of E/D-Mode AlGaN/GaN MIS-HEMTs

Low insertion loss GHz GaN SAW device fabricated on self-standing GaN substrate

An Electrothermal Model for Empirical Large- Signal Modeling of AlGaN/GaN HEMTs Including Self-Heating and Ambient Temperature Effects

A Scalable Large-Signal Multiharmonic Model of AlGaN/GaN HEMTs and Its Application in C-Band High Power Amplifier MMIC

Positive Shift in Threshold Voltage Induced by CuO and NiOx Gate in AlGaN/GaN HEMTs