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نمایش تعداد 1-10 از 28

Compound Semiconductor as CMOS Channel Material: Déjà vu or New Paradigm?

نوع: Journal Paper

نویسنده : Suman Datta

سال: 2008

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Band-gap engineered hot carrier tunnel transistors

نوع: Journal Paper

نویسنده : Saurabh Mookerjea; Suman Datta

سال: 2009

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Opportunities and Challenges of Tunnel FETs

نوع: Journal Paper

نویسنده : Rahul Pandey; Saurabh Mookerjea; Suman Datta

سال: 2016

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Steep switching tunnel FET: A promise to extend the energy efficient roadmap for post-CMOS digital and analog/RF applications

نوع: Journal Paper

نویسنده : Huichu Liu; Suman Datta; Vijaykrishnan Narayanan

سال: 2013

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Application of Silicon-Germanium Source Tunnel-FET to Enable Ultralow Power Cellular Neural Network-Based Associative Memory

نوع: Journal Paper

نویسنده : Amit Ranjan Trivedi; Suman Datta; Saibal Mukhopadhyay

سال: 2014

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Tunnel FET technology: A reliability perspective

نوع: Journal Paper

نویسنده : Suman Datta; Huichu Liu; Vijaykrishnan Narayanan

سال: 2014

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Impact of Transistor Architecture (Bulk Planar, Trigate on Bulk, Ultrathin-Body Planar SOI) and Material (Silicon or III–V Semiconductor) on Variation for Logic and SRAM Applications

نوع: Journal Paper

نویسنده : Nidhi Agrawal; Yoshie Kimura; Reza Arghavani; Suman Datta

سال: 2013

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An energy-efficient heterogeneous CMP based on hybrid TFET-CMOS cores

نوع: Journal Paper

نویسنده : Vinay Saripalli; Asit Mishra; Suman Datta; Vijaykrishnan Narayanan

سال: 2011

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Reliability Studies on High-Temperature Operation of Mixed As/Sb Staggered Gap Tunnel FET Material and Devices

نوع: Journal Paper

نویسنده : Yan Zhu; Dheeraj K. Mohata; Suman Datta; Mantu K. Hudait

سال: 2014

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Technology assessment of Si and III-V FinFETs and III-V tunnel FETs from soft error rate perspective

نوع: Journal Paper

نویسنده : Huichu Liu; Matthew Cotter; Suman Datta; Vijay Narayanan

سال: 2012

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Compound Semiconductor as CMOS Channel Material: Déjà vu or New Paradigm?

Band-gap engineered hot carrier tunnel transistors

Opportunities and Challenges of Tunnel FETs

Steep switching tunnel FET: A promise to extend the energy efficient roadmap for post-CMOS digital and analog/RF applications

Application of Silicon-Germanium Source Tunnel-FET to Enable Ultralow Power Cellular Neural Network-Based Associative Memory

Tunnel FET technology: A reliability perspective

Impact of Transistor Architecture (Bulk Planar, Trigate on Bulk, Ultrathin-Body Planar SOI) and Material (Silicon or III–V Semiconductor) on Variation for Logic and SRAM Applications

An energy-efficient heterogeneous CMP based on hybrid TFET-CMOS cores

Reliability Studies on High-Temperature Operation of Mixed As/Sb Staggered Gap Tunnel FET Material and Devices

Technology assessment of Si and III-V FinFETs and III-V tunnel FETs from soft error rate perspective

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Compound Semiconductor as CMOS Channel Material: Déjà vu or New Paradigm?

Band-gap engineered hot carrier tunnel transistors

Opportunities and Challenges of Tunnel FETs

Steep switching tunnel FET: A promise to extend the energy efficient roadmap for post-CMOS digital and analog/RF applications

Application of Silicon-Germanium Source Tunnel-FET to Enable Ultralow Power Cellular Neural Network-Based Associative Memory

Tunnel FET technology: A reliability perspective

Impact of Transistor Architecture (Bulk Planar, Trigate on Bulk, Ultrathin-Body Planar SOI) and Material (Silicon or III–V Semiconductor) on Variation for Logic and SRAM Applications

An energy-efficient heterogeneous CMP based on hybrid TFET-CMOS cores

Reliability Studies on High-Temperature Operation of Mixed As/Sb Staggered Gap Tunnel FET Material and Devices

Technology assessment of Si and III-V FinFETs and III-V tunnel FETs from soft error rate perspective