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Total-Ionizing-Dose Response of Narrow, Long Channel 45 nm PDSOI Transistors

Type: Journal Paper

Author : Alles, Michael L.; Hughes, Harold L.; Ball, D.R.; McMarr, Patrick J.; Schrimpf, R.D.

Publisher: IEEE

Year: 2014

Aging and baking effects on the radiation hardness of MOS capacitors

Type: Journal Paper

Author : Karmarkar, A.P.; Choi, B.K.; Schrimpf, R.D.; Fleetwood, D.M.

Year: 2001

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Gate Bias Dependence of Defect-Mediated Hot-Carrier Degradation in GaN HEMTs

Type: Journal Paper

Author : Puzyrev, Yevgeniy; Mukherjee, Sayan; Jin Chen; Roy, Tonmoy; Silvestri, M.; Schrimpf, R.D.; Fleetwood, D.M.; Singh, Jaskirat; Hinckley, John M.; Paccagnella, Alessandro; Pantelides, Sokrates T.

Publisher: IEEE

Year: 2014

Advanced SiGe BiCMOS Technology for Multi-Mrad Electronic Systems

Type: Journal Paper

Author : Fleetwood, Zachary E.; Kenyon, Eleazar W.; Lourenco, Nelson E.; Jain, Sonal; En Xia Zhang; England, Troy D.; Cressler, John D.; Schrimpf, R.D.; Fleetwood, D.M.

Publisher: IEEE

Year: 2014

RF Performance of Proton-Irradiated AlGaN/GaN HEMTs

Type: Journal Paper

Author : Jin Chen; En Xia Zhang; Cher Xuan Zhang; McCurdy, Michael W.; Fleetwood, D.M.; Schrimpf, R.D.; Kaun, Stephen W.; Kyle, Erin C. H.; Speck, James S.

Publisher: IEEE

Year: 2014

Impact of Technology Scaling on SRAM Soft Error Rates

Type: Journal Paper

Author : Chatterjee, I.; Narasimham, B.; Mahatme, N.N.; Bhuva, B.L.; Reed, R.A.; Schrimpf, R.D.; Wang, J.K.; Vedula, N.; Bartz, B.; Monzel, C.

Publisher: IEEE

Year: 2014

An Analytical Model to Quantify Decay Chain Disequilibrium–Application to the Thorium Decay Chain

Type: Journal Paper

Author : Kaouache, A.; Wrobel, F.; Saigné , Fré dé ric; Touboul, A.D.; Schrimpf, R.D.; Autran, J.L.

Publisher: IEEE

Year: 2014

Dynamic Modeling of Radiation-Induced State Changes in <formula formulatype="inline"> <img src="/images/tex/21563.gif" alt="{\\hbox {HfO}_2}/\\hbox {Hf}"> </formula> 1T1R RRAM

Type: Journal Paper

Author : Bennett, W.G.; Hooten, N.C.; Schrimpf, R.D.; Reed, R.A.; Alles, Michael L.; En Xia Zhang; Weeden-Wright, Stephanie L.; Linten, D.; Jurczak, Malgorzata; Fantini, Andrea

Publisher: IEEE

Year: 2014

Impact of Technology Scaling in sub-100 nm nMOSFETs on Total-Dose Radiation Response and Hot-Carrier Reliability

Type: Journal Paper

Author : Arora, Rajkumar; Fleetwood, Zachary E.; En Xia Zhang; Lourenco, Nelson E.; Cressler, John D.; Fleetwood, D.M.; Schrimpf, R.D.; Sutton, Akil K.; Freeman, G.; Greene, Brian

Publisher: IEEE

Year: 2014

Soft errors and NBTI in SiGe pMOS transistors

Type: Conference Paper

Author : Fleetwood, D.M.; Zhang, E.X.; Duan, G.X.; Zhang, C.X.; Samsel, I.K.; Hooten, N.C.; Bennett, W.G.; Schrimpf, R.D.; Reed, R.A.; Linten, D.; Mitard, J.

Publisher: IEEE

Year: 2014

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Total-Ionizing-Dose Response of Narrow, Long Channel 45 nm PDSOI Transistors

Aging and baking effects on the radiation hardness of MOS capacitors

Gate Bias Dependence of Defect-Mediated Hot-Carrier Degradation in GaN HEMTs

Advanced SiGe BiCMOS Technology for Multi-Mrad Electronic Systems

RF Performance of Proton-Irradiated AlGaN/GaN HEMTs

Impact of Technology Scaling on SRAM Soft Error Rates

An Analytical Model to Quantify Decay Chain Disequilibrium–Application to the Thorium Decay Chain

Dynamic Modeling of Radiation-Induced State Changes in <formula formulatype="inline"> <img src="/images/tex/21563.gif" alt="{\\hbox {HfO}_2}/\\hbox {Hf}"> </formula> 1T1R RRAM

Impact of Technology Scaling in sub-100 nm nMOSFETs on Total-Dose Radiation Response and Hot-Carrier Reliability

Soft errors and NBTI in SiGe pMOS transistors

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Total-Ionizing-Dose Response of Narrow, Long Channel 45&#x00A0;nm PDSOI Transistors

Aging and baking effects on the radiation hardness of MOS capacitors

Gate Bias Dependence of Defect-Mediated Hot-Carrier Degradation in GaN HEMTs

Advanced SiGe BiCMOS Technology for Multi-Mrad Electronic Systems

RF Performance of Proton-Irradiated AlGaN/GaN HEMTs

Impact of Technology Scaling on SRAM Soft Error Rates

An Analytical Model to Quantify Decay Chain Disequilibrium&#x2013;Application to the Thorium Decay Chain

Dynamic Modeling of Radiation-Induced State Changes in <formula formulatype="inline"> <img src="/images/tex/21563.gif" alt="{\\hbox {HfO}_2}/\\hbox {Hf}"> </formula> 1T1R RRAM

Impact of Technology Scaling in sub-100&#x00A0;nm nMOSFETs on Total-Dose Radiation Response and Hot-Carrier Reliability

Soft errors and NBTI in SiGe pMOS transistors

Total-Ionizing-Dose Response of Narrow, Long Channel 45 nm PDSOI Transistors

An Analytical Model to Quantify Decay Chain Disequilibrium–Application to the Thorium Decay Chain

Impact of Technology Scaling in sub-100 nm nMOSFETs on Total-Dose Radiation Response and Hot-Carrier Reliability