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Applying Kansei Engineering to Design an Affective Briefing Presentation for the Elders

Type: Journal Paper

Author : Pai Hsun Chen; Shiang Ru Huang

Year: 2014

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Fabrication of synthesized PCL‐PEG‐PCL tissue engineering scaffolds using an air pressure‐aided deposition system

Type: Journal Paper

Author : Cho‐Pei Jiang; Jyun‐Ru Huang; Ming‐Fa Hsieh

Year: 2011

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Energy-Efficient Monitoring in Software Defined Wireless Sensor Networks Using Reinforcement Learning: A Prototype

Type: Journal Paper

Author : Ru Huang; Xiaoli Chu; Jie Zhang; Yu Hen Hu

Year: 2015

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Estimation of groundwater recharge using water balance coupled with base-flow-record estimation and stable-base-flow analysis

Type: Journal Paper

Author : Cheng-Haw Lee; Wei-Ping Chen; Ru-Huang Lee

Year: 2006

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Estimation of groundwater recharge using water balance coupled with base-flow-record estimation and stable-base-flow analysis

Type: Journal Paper

Author : Cheng-Haw Lee; Wei-Ping Chen; Ru-Huang Lee

Year: 2007

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Improving analog/RF performance of multi-gate devices through multi-dimensional design optimization with awareness of variations and parasitics

Type: Journal Paper

Author : Yuchao Liu; Ru Huang; Runsheng Wang; Jiaojiao Ou; Yangyuan Wang

Year: 2012

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Investigation on random charging/discharging of single oxide trap in SiO<inf>2</inf>: An ab -initio study

Type: Conference Paper

Author : Jingwei Ji; Runsheng Wang; Yingxin Qiu; Ru Huang

Publisher: IEEE

Year: 2014

A Comparative Study on the Impacts of Interface Traps on Tunneling FET and MOSFET

Type: Journal Paper

Author : Yingxin Qiu; Runsheng Wang; Qianqian Huang; Ru Huang

Publisher: IEEE

Year: 2014

A closed-form capacitance model for tunnel FETs with explicit surface potential solutions

Type: Journal Paper

Author : Jiaxin Wang; Chunlei Wu; Qianqian Huang; Chao Wang; Ru Huang

Year: 2014

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Study on the Ge1−xSnx/HfO2 interface and its impacts on Ge1−xSnx tunneling transistor

Type: Journal Paper

Author : Yingxin Qiu; Runsheng Wang; Qianqian Huang; Ru Huang

Year: 2014

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Applying Kansei Engineering to Design an Affective Briefing Presentation for the Elders

Fabrication of synthesized PCL‐PEG‐PCL tissue engineering scaffolds using an air pressure‐aided deposition system

Energy-Efficient Monitoring in Software Defined Wireless Sensor Networks Using Reinforcement Learning: A Prototype

Estimation of groundwater recharge using water balance coupled with base-flow-record estimation and stable-base-flow analysis

Estimation of groundwater recharge using water balance coupled with base-flow-record estimation and stable-base-flow analysis

Improving analog/RF performance of multi-gate devices through multi-dimensional design optimization with awareness of variations and parasitics

Investigation on random charging/discharging of single oxide trap in SiO<inf>2</inf>: An ab -initio study

A Comparative Study on the Impacts of Interface Traps on Tunneling FET and MOSFET

A closed-form capacitance model for tunnel FETs with explicit surface potential solutions

Study on the Ge1−xSnx/HfO2 interface and its impacts on Ge1−xSnx tunneling transistor

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Applying Kansei Engineering to Design an Affective Briefing Presentation for the Elders

Fabrication of synthesized PCL‐PEG‐PCL tissue engineering scaffolds using an air pressure‐aided deposition system

Energy-Efficient Monitoring in Software Defined Wireless Sensor Networks Using Reinforcement Learning: A Prototype

Estimation of groundwater recharge using water balance coupled with base-flow-record estimation and stable-base-flow analysis

Estimation of groundwater recharge using water balance coupled with base-flow-record estimation and stable-base-flow analysis

Improving analog/RF performance of multi-gate devices through multi-dimensional design optimization with awareness of variations and parasitics

Investigation on random charging/discharging of single oxide trap in SiO<inf>2</inf>: An ab -initio study

A Comparative Study on the Impacts of Interface Traps on Tunneling FET and MOSFET

A closed-form capacitance model for tunnel FETs with explicit surface potential solutions

Study on the Ge1−xSnx/HfO2 interface and its impacts on Ge1−xSnx tunneling transistor