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    Modified 1/f trapping noise theory and experiments in MOS transistors biased from weak to strong inversion—Influence of interface states 

    Type: Journal Paper
    Author : Reimbold, G.
    Year: 1984
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    Piezoresistivity in unstrained and strained SOI MOSFETs 

    Type: Conference Paper
    Author : Berthelon, R.; Casse, M.; Rideau, D.; Nier, O.; Andrieu, F.; Vincent, E.; Reimbold, G.
    Publisher: IEEE
    Year: 2014

    Characterization of piezoresistive coefficients in silicon nanowire transistors 

    Type: Conference Paper
    Author : Pelloux-Prayer, J. , Cassé , M. , Barraud, S. , Rouviè re, J.-L. , Reimbold, G.
    Publisher: IEEE
    Year: 2014

    Superior performance and Hot Carrier reliability of Strained FDSOI nMOSFETs for advanced CMOS technology nodes 

    Type: Conference Paper
    Author : Besnard, G.; Garros, X.; Andrieu, F.; Nguyen, P.; Van Den Daele, W.; Reynaud, P.; Schwarzenbach, W.; Delprat, D.; Bourdelle, K.K.; Reimbold, G.; Cristoloveanu, S.
    Publisher: IEEE
    Year: 2014

    A Complete Characterization and Modeling of the BTI-Induced Dynamic Variability of SRAM Arrays in 28-nm FD-SOI Technology 

    Type: Journal Paper
    Author : El Husseini, J.; Garros, X.; Cluzel, J.; Subirats, A.; Makosiej, A.; Weber, O.; Thomas, O.; Huard, V.; Federspiel, X.; Reimbold, G.
    Publisher: IEEE
    Year: 2014

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