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نمایش تعداد 1-10 از 13
The effect of adding InGaN interlayer on AlGaN/GaN Double-Channel HEMT for noise improvement
ناشر: Ferdowsi University of Mashhad Pressانتشارات دانشگاه فردوسی مشهد
سال: 1392
خلاصه:
High-performance of Al0.3Ga0.7N/GaN high electron-mobility transistors (HEMTs) with 1µm gate length are investigated by TCAD. The device exhibit a transconductance of about 110 ms/mm at VDS=9 V and a minimum noise figure ...
Analysis of Lattice Temperature Effects on a GaInP/6H-SiC Strained Quantum-Well Lasers
سال: 2013
خلاصه:
In this paper, simulative study on the effects of lattice temperature on a GaInP/6H-SiC strained quantum-well (QW) laser\\'s device is presented. Loss mechanisms are severe in the edge-emitting lasers. As a consequence, ...