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نمایش تعداد 1-4 از 4

New Weighted Time Lag Method for the Analysis of Random Telegraph Signals

نوع: Journal Paper

نویسنده : Martin-Martinez, J.; Diaz, J.; Rodriguez, Roberto; Nafria, M.; Aymerich, X.

ناشر: IEEE

سال: 2014

TCAD simulation of interface traps related variability in bulk decananometer mosfets

نوع: Conference Paper

نویسنده : Velayudhan, V.; Martin-Martinez, J.; Rodriguez, R.; Porti, M.; Nafria, M.; Aymerich, X.; Medina, C.; Gamiz, F.

ناشر: IEEE

سال: 2014

Characterization of random telegraph noise and its impact on reliability of SRAM sense amplifiers

نوع: Conference Paper

نویسنده : Martin-Martinez, J.; Diaz, J.; Rodriguez, R.; Nafria, M.; Aymerich, X.; Roca, E.; Fernandez, F.V.; Rubio, A.

ناشر: IEEE

سال: 2014

A Conductive AFM Nanoscale Analysis of NBTI and Channel Hot-Carrier Degradation in MOSFETs

نوع: Journal Paper

نویسنده : Qian Wu; Bayerl, A.; Porti, M.; Martin-Martinez, J.; Lanza, Mario; Rodriguez, Roberto; Velayudhan, V.; Nafria, M.; Aymerich, X.; Bargallo Gonzalez, Mireia; Simoen, Eddy

ناشر: IEEE

سال: 2014

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New Weighted Time Lag Method for the Analysis of Random Telegraph Signals

TCAD simulation of interface traps related variability in bulk decananometer mosfets

Characterization of random telegraph noise and its impact on reliability of SRAM sense amplifiers

A Conductive AFM Nanoscale Analysis of NBTI and Channel Hot-Carrier Degradation in MOSFETs

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New Weighted Time Lag Method for the Analysis of Random Telegraph Signals

TCAD simulation of interface traps related variability in bulk decananometer mosfets

Characterization of random telegraph noise and its impact on reliability of SRAM sense amplifiers

A Conductive AFM Nanoscale Analysis of NBTI and Channel Hot-Carrier Degradation in MOSFETs