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Compact modeling beyond device physics

نوع: Conference Paper

نویسنده : Lining Zhang; Mansun Chan

ناشر: IEEE

سال: 2014

A compact low-power 4-port register file with grounded write bitlines and single-ended read operations

نوع: Journal Paper

نویسنده : Khawar Sarfraz; Mansun Chan

سال: 2016

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Eight-FinFET Fully Differential SRAM Cell With Enhanced Read and Write Voltage Margins

نوع: Journal Paper

نویسنده : Shairfe Muhammad Salahuddin; Mansun Chan

سال: 2015

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A compact model for double-gate tunneling field-effect-transistors and its implications on circuit behaviors

نوع: Journal Paper

نویسنده : Lining Zhang; Jin He; Mansun Chan

سال: 2012

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Influence of fin-width lateral variations of a FinFET

نوع: Conference Paper

نویسنده : Prawoto, C.C. , Cheralathan, M. , Mansun Chan

ناشر: IEEE

سال: 2014

Device Electronics for Integrated Circuits 3rd Ed.

نوع: Ebook

نویسنده : Richard S. Muller; Theodore I. Kamins; Mansun Chan

سال: 2003

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A 200-Channel Area-Power-Efficient Chemical and Electrical Dual-Mode Acquisition IC for the Study of Neurodegenerative Diseases

نوع: Journal Paper

نویسنده : Jing Guo; Waichiu Ng; Jie Yuan; Suwen Li; Mansun Chan

سال: 2016

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A robust and physical BSIM3 non-quasi-static transient and AC small-signal model for circuit simulation

نوع: Journal Paper

نویسنده : Mansun Chan; Hui, K.Y.; Chenming Hu; Ko, P.K.

سال: 1998

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Origin of Nonideal Graphene-Silicon Schottky Junction

نوع: Journal Paper

نویسنده : Xintong Zhang; Lining Zhang; Zubair Ahmed; Mansun Chan

سال: 2018

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Device Electronics for Integrated Circuits

نوع: Ebook

نویسنده : Richard S. Muller; Theodore I. Kamins; Mansun Chan

ناشر: John Wiley & Sons

سال: 2002

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Compact modeling beyond device physics

A compact low-power 4-port register file with grounded write bitlines and single-ended read operations

Eight-FinFET Fully Differential SRAM Cell With Enhanced Read and Write Voltage Margins

A compact model for double-gate tunneling field-effect-transistors and its implications on circuit behaviors

Influence of fin-width lateral variations of a FinFET

Device Electronics for Integrated Circuits 3rd Ed.

A 200-Channel Area-Power-Efficient Chemical and Electrical Dual-Mode Acquisition IC for the Study of Neurodegenerative Diseases

A robust and physical BSIM3 non-quasi-static transient and AC small-signal model for circuit simulation

Origin of Nonideal Graphene-Silicon Schottky Junction

Device Electronics for Integrated Circuits

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Compact modeling beyond device physics

A compact low-power 4-port register file with grounded write bitlines and single-ended read operations

Eight-FinFET Fully Differential SRAM Cell With Enhanced Read and Write Voltage Margins

A compact model for double-gate tunneling field-effect-transistors and its implications on circuit behaviors

Influence of fin-width lateral variations of a FinFET

Device Electronics for Integrated Circuits 3rd Ed.

A 200-Channel Area-Power-Efficient Chemical and Electrical Dual-Mode Acquisition IC for the Study of Neurodegenerative Diseases

A robust and physical BSIM3 non-quasi-static transient and AC small-signal model for circuit simulation

Origin of Nonideal Graphene-Silicon Schottky Junction

Device Electronics for Integrated Circuits