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نمایش تعداد 1-5 از 5

DC and RF characteristics study of MIM capacitors with various Al<inf>2</inf>O<inf>3</inf> thicknesses

نوع: Conference Paper

نویسنده : Jiahui Zhou; Hudong Chang; Xufang Zhang; Zhenhua Zeng; Xu Yang; Haiou Li; Honggang Liu

ناشر: IEEE

سال: 2014

Quantum Fisher Information for s u(2) Atomic Coherent States and s u(1, 1) Coherent States

نوع: Journal Paper

نویسنده : Qi Song; Honggang Liu; Yuefeng Zhao; Yan Zeng; Gangcheng Wang; Kang Xue

سال: 2015

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The Comparison of Current Ratio $I_{\\mathrm{\\scriptscriptstyle ON}}/I_{\\mathrm{\\scriptscriptstyle OFF}}$ and Mobility Between SiGe Substrate and GaAs Substrate In0.23Ga0.77As Channel MOSFETs

نوع: Journal Paper

نویسنده : Xiangting Kong; Renrong Liang; Xuliang Zhou; Shiyan Li; Mengqi Wang; Honggang Liu; Jing Wang; Wei Wang; Jiaoqing Pan

سال: 2016

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Impacts of annealing processes on the electrical properties of gasb metal-oxide-semiconductor devices

نوع: Conference Paper

نویسنده : Zhenhua Zeng; Bing Sun; Hudong Chang; Wei Zhao; Xu Yang; Jiahui Zhou; Shengkai Wang; Xiong Zhang; Yiping Cui; Honggang Liu

ناشر: IEEE

سال: 2014

A novel RF switch device using InGaAs MOSFET technology

نوع: Conference Paper

نویسنده : Jiahui Zhou; Hudong Chang; Xufang Zhang; Jingzhi Yang; Zhenhua Zeng; Xu Yang; Honggang Liu; Simin Li; Qi Li; Wenjun Xu; Haiou Li

ناشر: IEEE

سال: 2014

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DC and RF characteristics study of MIM capacitors with various Al<inf>2</inf>O<inf>3</inf> thicknesses

Quantum Fisher Information for s u(2) Atomic Coherent States and s u(1, 1) Coherent States

The Comparison of Current Ratio $I_{\\mathrm{\\scriptscriptstyle ON}}/I_{\\mathrm{\\scriptscriptstyle OFF}}$ and Mobility Between SiGe Substrate and GaAs Substrate In0.23Ga0.77As Channel MOSFETs

Impacts of annealing processes on the electrical properties of gasb metal-oxide-semiconductor devices

A novel RF switch device using InGaAs MOSFET technology

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DC and RF characteristics study of MIM capacitors with various Al<inf>2</inf>O<inf>3</inf> thicknesses

Quantum Fisher Information for s u(2) Atomic Coherent States and s u(1, 1) Coherent States

The Comparison of Current Ratio $I_{\\mathrm{\\scriptscriptstyle ON}}/I_{\\mathrm{\\scriptscriptstyle OFF}}$ and Mobility Between SiGe Substrate and GaAs Substrate In0.23Ga0.77As Channel MOSFETs

Impacts of annealing processes on the electrical properties of gasb metal-oxide-semiconductor devices

A novel RF switch device using InGaAs MOSFET technology