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نمایش تعداد 1-5 از 5

Correlation of threading screw dislocation density to GaN 2-DEG mobility

نوع: Journal Paper

نویسنده : Hite, Jennifer K.; Gaddipati, P.; Meyer, D.J.; Mastro, Michael /A/.; Eddy, Charles R.

ناشر: IET

سال: 2014

Process optimization of multicycle rapid thermal annealing of Mg-implanted GaN

نوع: Conference Paper

نویسنده : Greenlee, Jordan D.; Feigelson, Boris N.; Anderson, Travis J.; Tadjer, Marko J.; Hite, Jennifer K.; Eddy, Charles R.; Hobart, Karl D.; Kub, Francis J.

ناشر: IEEE

سال: 2014

Activation of Mg implanted in GaN by multicycle rapid thermal annealing

نوع: Journal Paper

نویسنده : Anderson, Travis J.; Feigelson, Boris N.; Kub, Francis J.; Tadjer, Marko J.; Hobart, Karl D.; Mastro, Michael /A/.; Hite, Jennifer K.; Eddy, Charles R.

ناشر: IET

سال: 2014

Substrate-Dependent Effects on the Response of AlGaN/GaN HEMTs to 2-MeV Proton Irradiation

نوع: Journal Paper

نویسنده : Anderson, Travis J.; Koehler, Andrew D.; Greenlee, Jordan D.; Weaver, Bradley D.; Mastro, Michael /A/.; Hite, Jennifer K.; Eddy, Charles R.; Kub, Francis J.; Hobart, Karl D.

ناشر: IEEE

سال: 2014

Degradation mechanisms of AlGaN/GaN HEMTs on sapphire, Si, and SiC substrates under proton irradiation

نوع: Conference Paper

نویسنده : Koehler, Andrew D.; Anderson, Travis J.; Hite, Jennifer K.; Weaver, Bradley D.; Tadjer, Marko J.; Mastro, Michael A.; Greenlee, Jordan D.; Specht, Petra; Porter, Matthew; Weatherford, Todd R.; Hobart, Karl D.; Kub, Fritz J.

ناشر: IEEE

سال: 2014

Search

Correlation of threading screw dislocation density to GaN 2-DEG mobility

Process optimization of multicycle rapid thermal annealing of Mg-implanted GaN

Activation of Mg implanted in GaN by multicycle rapid thermal annealing

Substrate-Dependent Effects on the Response of AlGaN/GaN HEMTs to 2-MeV Proton Irradiation

Degradation mechanisms of AlGaN/GaN HEMTs on sapphire, Si, and SiC substrates under proton irradiation

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Correlation of threading screw dislocation density to GaN 2-DEG mobility

Process optimization of multicycle rapid thermal annealing of Mg-implanted GaN

Activation of Mg implanted in GaN by multicycle rapid thermal annealing

Substrate-Dependent Effects on the Response of AlGaN/GaN HEMTs to 2-MeV Proton Irradiation

Degradation mechanisms of AlGaN/GaN HEMTs on sapphire, Si, and SiC substrates under proton irradiation