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نمایش تعداد 1-3 از 3

1–20 Ghz kΩ-range BiCMOS 55 nm reflectometer

نوع: Conference Paper

نویسنده : Ferreira, P.M.; Donche, C.; Haddadi, K.; Lasri, T.; Dambrine, G.; Gaquiere, C.; Quemerais, T.; Gloria, D.

ناشر: IEEE

سال: 2014

GaN-based Implanted self switching diodes for THz imaging

نوع: Conference Paper

نویسنده : Sangare, P.; Ducournau, G.; Grimbert, B.; Faucher, M.; Iniguez-de-la-Torre, I.; Gonzalez, T.; Mateos, J.; Gaquiere, C.

ناشر: IEEE

سال: 2014

On the correlation between kink effect and effective mobility in InAlN/GaN HEMTs

نوع: Conference Paper

نویسنده : Altuntas, P.; Defrance, N.; Lesecq, M.; Agboton, A.; Ouhachi, R.; Okada, E.; Gaquiere, C.; De Jaeger, J.-C.; Frayssinet, E.; Cordier, Y.

ناشر: IEEE

سال: 2014

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1–20 Ghz kΩ-range BiCMOS 55 nm reflectometer

GaN-based Implanted self switching diodes for THz imaging

On the correlation between kink effect and effective mobility in InAlN/GaN HEMTs

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1&#x2013;20 Ghz k&#x03A9;-range BiCMOS 55 nm reflectometer

GaN-based Implanted self switching diodes for THz imaging

On the correlation between kink effect and effective mobility in InAlN/GaN HEMTs

1–20 Ghz kΩ-range BiCMOS 55 nm reflectometer