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Total-Ionizing-Dose Induced Coupling Effect in the 130-nm PDSOI I/O nMOSFETs

Type: Journal Paper

Author : Chao Peng; Zhiyuan Hu; Bingxu Ning; Huixiang Huang; Zhengxuan Zhang; Dawei Bi; Yunfei En; Shichang Zou

Publisher: IEEE

Year: 2014

Improving Total Dose Tolerance of Buried Oxides in SOI Wafers by Multiple-Step <formula formulatype="inline"> <img src="/images/tex/21472.gif" alt="{\\hbox {Si}}^ + "> </formula> Implantation

Type: Journal Paper

Author : Huixiang Huang; Dawei Bi; Ming Chen; Yanwei Zhang; Xing Wei; Zhiyuan Hu; Zhengxuan Zhang

Publisher: IEEE

Year: 2014

Single Event Upset Sensitivity of D-Flip Flop: Comparison of PDSOI With Bulk Si at 130 nm Technology Node

Type: Journal Paper

Author : Leqing Zhang; Jialing Xu; Shuang Fan; Lihua Dai; Dawei Bi; Jian Lu; Zhiyuan Hu; Mengying Zhang; Zhengxuan Zhang

Year: 2017

Author

Dawei Bi (3)

Zhengxuan Zhang (3)

Zhiyuan Hu (3)

Huixiang Huang (2)

Bingxu Ning (1)

Chao Peng (1)

Jialing Xu (1)

Jian Lu (1)

Leqing Zhang (1)

Lihua Dai (1)

Publisher

IEEE (2)

Year

2017 (1)

2014 (2)

Keywords

Si (2)

silicon-on-insulator (2)

amorphous-crystalline interface (1)

back channel implantation (1)

bonded-wafer fabrication (1)

buried oxide (1)

buried oxides (1)

enhanced drain-induced barrier lowering effect (1)

front channel device (1)

hardening (1)

Type

Journal Paper (3)

Language (ISO)

English (3)

Content Type

Metadata Only (2)

Fulltext (1)

Publication Title

Electron Device Letters, IEEE (1)

IEEE Transactions on Nuclear Science (1)

Nuclear Science, IEEE Transactions on (1)

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