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Mobility Improvement Study for 8-Å-EOT HfO<sub>2</sub> UTBB-FD-SOI MOSFET Based on the Direct Extraction of the Back-Channel Mobility

نوع: Journal Paper

نویسنده : Trojman, Lionel; Ragnarsson, Lars-Ake; Collaert, Nadine

ناشر: IEEE

سال: 2014

Border Traps in InGaAs nMOSFETs Assessed by Low-Frequency Noise

نوع: Journal Paper

نویسنده : Scarpino, Mercedes; Gupta, Swastik; Lin, Dongyang; Alian, A.; Crupi, Felice; Collaert, Nadine; Thean, A.; Simoen, Eddy

ناشر: IEEE

سال: 2014

A Simplified Method for (Circular) Transmission Line Model Simulation and Ultralow Contact Resistivity Extraction

نوع: Journal Paper

نویسنده : Hao Yu; Schaekers, Marc; Schram, T.; Collaert, Nadine; de Meyer, K.; Horiguchi, Naoto; Thean, A.; Barla, Kathy

ناشر: IEEE

سال: 2014

InGaAs Gate-All-Around Nanowire Devices on 300mm Si Substrates

نوع: Journal Paper

نویسنده : Waldron, Niamh; Merckling, C.; Teugels, Lieve; Ong, Patrick; Ibrahim, Sheikh Ansar Usman; Sebaai, Farid; Pourghaderi, Ali; Barla, Kathy; Collaert, Nadine; Thean, Aaron Voon-Yew

ناشر: IEEE

سال: 2014

Fabrication and Analysis of a <formula formulatype="inline"> <img src="/images/tex/21408.gif" alt="{\\rm Si}/{\\rm Si}_{0.55}{\\rm Ge}_{0.45}"> </formula> Heterojunction Line Tunnel FET

نوع: Journal Paper

نویسنده : Walke, Amey Mahadev; Vandooren, A.; Rooyackers, R.; Leonelli, Daniele; Hikavyy, Andriy; Loo, Roger; Verhulst, Anne S.; Kuo-Hsing Kao; Huyghebaert, Cedric; Groeseneken, Guido; Rao, Valipe Ramgopal; Bhuwalka, Krishna K.; Heyns, M.M.; Collaert, Nadine; Thean, Aaron Voon-Yew

ناشر: IEEE

سال: 2014

A Low-Power HKMG CMOS Platform Compatible With Dram Node 2× and Beyond

نوع: Journal Paper

نویسنده : Ritzenthaler, R.; Schram, T.; Spessot, A.; Caillat, Christian; Aoulaiche, Marc; Moon Ju Cho; Kyoung Bong Noh; Son, Yeongrack; Hoon Joo Na; Kauerauf, T.; Douhard, B.; Nazir, A.; Soon Aik Chew; Milenin, A.P.; Altamirano-Sanchez, E.; Schoofs, Geert; Albert, J.; Sebai, Farid; Vecchio, Emma; Paraschiv, V.; Vandervorst, W.; Sun-Ghil Lee; Collaert, Nadine; Fazan, P.; Horiguchi, Naoto; Thean, Aaron Voon-Yew

ناشر: IEEE

سال: 2014

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Mobility Improvement Study for 8-Å-EOT HfO<sub>2</sub> UTBB-FD-SOI MOSFET Based on the Direct Extraction of the Back-Channel Mobility

Border Traps in InGaAs nMOSFETs Assessed by Low-Frequency Noise

A Simplified Method for (Circular) Transmission Line Model Simulation and Ultralow Contact Resistivity Extraction

InGaAs Gate-All-Around Nanowire Devices on 300mm Si Substrates

Fabrication and Analysis of a <formula formulatype="inline"> <img src="/images/tex/21408.gif" alt="{\\rm Si}/{\\rm Si}_{0.55}{\\rm Ge}_{0.45}"> </formula> Heterojunction Line Tunnel FET

A Low-Power HKMG CMOS Platform Compatible With Dram Node 2× and Beyond

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Mobility Improvement Study for 8-&#x00C5;-EOT HfO<sub>2</sub> UTBB-FD-SOI MOSFET Based on the Direct Extraction of the Back-Channel Mobility

Border Traps in InGaAs nMOSFETs Assessed by Low-Frequency Noise

A Simplified Method for (Circular) Transmission Line Model Simulation and Ultralow Contact Resistivity Extraction

InGaAs Gate-All-Around Nanowire Devices on 300mm Si Substrates

Fabrication and Analysis of a <formula formulatype="inline"> <img src="/images/tex/21408.gif" alt="{\\rm Si}/{\\rm Si}_{0.55}{\\rm Ge}_{0.45}"> </formula> Heterojunction Line Tunnel FET

A Low-Power HKMG CMOS Platform Compatible With Dram Node 2&#x00D7; and Beyond

Mobility Improvement Study for 8-Å-EOT HfO<sub>2</sub> UTBB-FD-SOI MOSFET Based on the Direct Extraction of the Back-Channel Mobility

A Low-Power HKMG CMOS Platform Compatible With Dram Node 2× and Beyond