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نمایش تعداد 1-10 از 17

Low frequency noise characterization of advanced and end of the roadmap devices

نوع: Conference Paper

نویسنده : Claeys, C.; Simoen, E.

ناشر: IEEE

سال: 2014

A Two-Dimensional Model for Interface Coupling in Triple-Gate Transistors

نوع: Journal Paper

نویسنده : Akarvardar, K.; Mercha, A.; Cristoloveanu, S.; Gentil, P.; Simoen, E.; Subramanian, V.; Claeys, C.

ناشر: IEEE

سال: 2007

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Performances under saturation operation of p-channel FinFETs on SOI substrates at cryogenic temperature

نوع: Conference Paper

نویسنده : Achour, H.; Cretu, B.; Routoure, J.-M.; Carin, R.; Benfdila, A.; Simoen, E.; Claeys, C.

ناشر: IEEE

سال: 2014

Field effect transistors: From mosfet to Tunnel-Fet analog performance perspective

نوع: Conference Paper

نویسنده : Martino, J.A.; Agopian, P.G.D.; Simoen, E.; Claeys, C.

ناشر: IEEE

سال: 2014

Study of ΔID/ID of a single charge trap in utbox silicon films

نوع: Conference Paper

نویسنده : Wen Fang; Simoen, E.; Aoulaiche, M.; Jun Luo; Chao Zhao; Claeys, C.

ناشر: IEEE

سال: 2014

Influence of high temperature on substrate effect of UTBB SOI nMOSFETs

نوع: Conference Paper

نویسنده : Itocazu, V.T.; Sonnenberg, V.; Simoen, E.; Claeys, C.; Martino, J.A.

ناشر: IEEE

سال: 2014

Silicon film thickness influence on enhanced dynamic threshold UTBB SOI nMOSFETs

نوع: Conference Paper

نویسنده : Sasaki, K.R.A.; Aoulaiche, M.; Simoen, E.; Claeys, C.; Martino, J.A.

ناشر: IEEE

سال: 2014

Comparison of analog performance between SOI and Bulk pFinFET

نوع: Conference Paper

نویسنده : Oliveira, A.V.; Agopian, P.G.D.; Simoen, E.; Claeys, C.; Martino, J.A.

ناشر: IEEE

سال: 2014

Influence of underlap on UTBB SOI MOSFETs in dynamic threshold mode

نوع: Conference Paper

نویسنده : Sasaki, K.R.A.; Aoulaiche, M.; Simoen, E.; Claeys, C.; Martino, J.A.

ناشر: IEEE

سال: 2014

Fin width influence on analog performance of SOI and bulk FINFETs

نوع: Conference Paper

نویسنده : Oliveira, A.V.; Agopian, P.G.D.; Martino, J.A.; Simoen, E.; Claeys, C.

ناشر: IEEE

سال: 2014

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Low frequency noise characterization of advanced and end of the roadmap devices

A Two-Dimensional Model for Interface Coupling in Triple-Gate Transistors

Performances under saturation operation of p-channel FinFETs on SOI substrates at cryogenic temperature

Field effect transistors: From mosfet to Tunnel-Fet analog performance perspective

Study of ΔID/ID of a single charge trap in utbox silicon films

Influence of high temperature on substrate effect of UTBB SOI nMOSFETs

Silicon film thickness influence on enhanced dynamic threshold UTBB SOI nMOSFETs

Comparison of analog performance between SOI and Bulk pFinFET

Influence of underlap on UTBB SOI MOSFETs in dynamic threshold mode

Fin width influence on analog performance of SOI and bulk FINFETs

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Low frequency noise characterization of advanced and end of the roadmap devices

A Two-Dimensional Model for Interface Coupling in Triple-Gate Transistors

Performances under saturation operation of p-channel FinFETs on SOI substrates at cryogenic temperature

Field effect transistors: From mosfet to Tunnel-Fet analog performance perspective

Study of &#x0394;ID/ID of a single charge trap in utbox silicon films

Influence of high temperature on substrate effect of UTBB SOI nMOSFETs

Silicon film thickness influence on enhanced dynamic threshold UTBB SOI nMOSFETs

Comparison of analog performance between SOI and Bulk pFinFET

Influence of underlap on UTBB SOI MOSFETs in dynamic threshold mode

Fin width influence on analog performance of SOI and bulk FINFETs

Study of ΔID/ID of a single charge trap in utbox silicon films