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نمایش تعداد 1-9 از 9

Conversion efficiency improvement mechanisms of polymer solar cells by balance electron–hole mobility using blended P3HT:PCBM:pentacene active layer

نوع: Journal Paper

نویسنده : Ching-Ting Lee; Cheng-Hsin Lee

سال: 2013

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GaN-based metal-oxide-semiconductor field-effect transistors

نوع: Conference Paper

نویسنده : Ching-Ting Lee; Ya-Lan Chou

ناشر: IEEE

سال: 2014

Performance improvement mechanisms of P3HT:PCBM inverted polymer solar cells using extra PCBM and extra P3HT interfacial layers

نوع: Journal Paper

نویسنده : Hung-Lin Huang; Ching-Ting Lee; Hsin-Ying Lee

سال: 2015

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Integrated pH Sensors and Performance Improvement Mechanism of ZnO-Based Ion-Sensitive Field-Effect Transistors

نوع: Journal Paper

نویسنده : Ching-Ting Lee; Ying-Shuo Chiu; Li-Ren Lou; Shu-Ching Ho; Chun-Te Chuang

ناشر: IEEE

سال: 2014

Investigation of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Grown by Triple-Targets Magnetron Co-Sputtering

نوع: Journal Paper

نویسنده : Ching-Ting Lee; Yung-Hao Lin; Mu-Min Chang; Hsin-ying Lee

ناشر: IEEE

سال: 2014

GaN-Based Enhancement-Mode Metal–Oxide–Semiconductor High-Electron Mobility Transistors Using LiNbO₃ Ferroelectric Insulator on Gate-Recessed Structure

نوع: Journal Paper

نویسنده : Ching-Ting Lee; Chang-Lin Yang; Chun-Yen Tseng; Jhe-Hao Chang; Ray-Hua Horng

سال: 2015

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Performance Investigation of Amorphous InGaZnO Flexible Thin-Film Transistors Deposited on PET Substrates

نوع: Journal Paper

نویسنده : Hsin-ying Lee; Wan-Yi Ye; Yung-Hao Lin; Ching-Ting Lee

ناشر: IEEE

سال: 2014

Strong guided mode resonant local field enhanced visible harmonic generation in an azo-polymer resonant waveguide grating

نوع: Journal Paper

نویسنده : Jian Hung Lin; Chun-Yen Tseng; Ching-Ting Lee; Jeff F. Young; Hung-Chih Kan; Chia Chen Hsu

سال: 2014

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Investigation of the Flip-Chip Package With BCB Underfill for W-Band Applications

نوع: Journal Paper

نویسنده : Chin-Te Wang; Li-Han Hsu; Wei-Cheng Wu; Heng-Tung Hsu; Chang, Edward Yi; Yin-Chu Hu; Ching-Ting Lee; Szu-Ping Tsai

ناشر: IEEE

سال: 2014

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Conversion efficiency improvement mechanisms of polymer solar cells by balance electron–hole mobility using blended P3HT:PCBM:pentacene active layer

GaN-based metal-oxide-semiconductor field-effect transistors

Performance improvement mechanisms of P3HT:PCBM inverted polymer solar cells using extra PCBM and extra P3HT interfacial layers

Integrated pH Sensors and Performance Improvement Mechanism of ZnO-Based Ion-Sensitive Field-Effect Transistors

Investigation of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Grown by Triple-Targets Magnetron Co-Sputtering

GaN-Based Enhancement-Mode Metal–Oxide–Semiconductor High-Electron Mobility Transistors Using LiNbO₃ Ferroelectric Insulator on Gate-Recessed Structure

Performance Investigation of Amorphous InGaZnO Flexible Thin-Film Transistors Deposited on PET Substrates

Strong guided mode resonant local field enhanced visible harmonic generation in an azo-polymer resonant waveguide grating

Investigation of the Flip-Chip Package With BCB Underfill for W-Band Applications

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Conversion efficiency improvement mechanisms of polymer solar cells by balance electron–hole mobility using blended P3HT:PCBM:pentacene active layer

GaN-based metal-oxide-semiconductor field-effect transistors

Performance improvement mechanisms of P3HT:PCBM inverted polymer solar cells using extra PCBM and extra P3HT interfacial layers

Integrated pH Sensors and Performance Improvement Mechanism of ZnO-Based Ion-Sensitive Field-Effect Transistors

Investigation of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Grown by Triple-Targets Magnetron Co-Sputtering

GaN-Based Enhancement-Mode Metal–Oxide–Semiconductor High-Electron Mobility Transistors Using LiNbO3 Ferroelectric Insulator on Gate-Recessed Structure

Performance Investigation of Amorphous InGaZnO Flexible Thin-Film Transistors Deposited on PET Substrates

Strong guided mode resonant local field enhanced visible harmonic generation in an azo-polymer resonant waveguide grating

Investigation of the Flip-Chip Package With BCB Underfill for W-Band Applications

GaN-Based Enhancement-Mode Metal–Oxide–Semiconductor High-Electron Mobility Transistors Using LiNbO₃ Ferroelectric Insulator on Gate-Recessed Structure