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نمایش تعداد 1-4 از 4

Line and Point Tunneling in Scaled Si/SiGe Heterostructure TFETs

نوع: Journal Paper

نویسنده : Schmidt, Martin; Schafer, Andreas; Minamisawa, R.A.; Buca, Dan; Trellenkamp, Stefan; Hartmann, J.-M.; Qing-Tai Zhao; Mantl, Siegfried

ناشر: IEEE

سال: 2014

Epitaxy and photoluminescence studies of high quality GeSn heterostructures with Sn concentrations up to 13 at.%

نوع: Conference Paper

نویسنده : Wirths, Stephan; Geiger, Richard; Ikonic, Zoran; Tiedemann, Andreas T.; Mussler, Gregor; Hartmann, Jean-Michel; Mantl, Siegfried; Sigg, Hans; Grutzmacher, Detlev; Buca, Dan

ناشر: IEEE

سال: 2014

Strain engineering for direct bandgap GeSn alloys

نوع: Conference Paper

نویسنده : Wirths, Stephan; Stange, Daniela; Geiger, Richard; Ikonic, Zoran; Stoica, Toma; Mussler, Gregor; Hartmann, Jean-Michel; Sigg, Hans; Grutzmacher, Detlev; Mantl, Siegfried; Buca, Dan

ناشر: IEEE

سال: 2014

GeSn Heterojunction LEDs on Si Substrates

نوع: Journal Paper

نویسنده : Oehme, Michael; Kostecki, Konrad; Arguirov, Tzanimir; Mussler, Gregor; Kaiheng Ye; Gollhofer, Martin; Schmid, Maurizio; Kaschel, Mathias; Korner, Roman Alexander; Kittler, M.; Buca, Dan; Kasper, Erich; Schulze, J.

ناشر: IEEE

سال: 2014

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Line and Point Tunneling in Scaled Si/SiGe Heterostructure TFETs

Epitaxy and photoluminescence studies of high quality GeSn heterostructures with Sn concentrations up to 13 at.%

Strain engineering for direct bandgap GeSn alloys

GeSn Heterojunction LEDs on Si Substrates

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Line and Point Tunneling in Scaled Si/SiGe Heterostructure TFETs

Epitaxy and photoluminescence studies of high quality GeSn heterostructures with Sn concentrations up to 13 at.%

Strain engineering for direct bandgap GeSn alloys

GeSn Heterojunction LEDs on Si Substrates