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نمایش تعداد 1-10 از 18

Factoring variability in the Design/Technology Co Optimisation (DTCO) in advanced CMOS

نوع: Conference Paper

نویسنده : Asenov, A.

ناشر: IEEE

سال: 2014

Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFET\'s: A 3-D “atomistic” simulation study

نوع: Journal Paper

نویسنده : Asenov, A.

سال: 1998

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Progress in the simulation of time dependent statistical variability in nano CMOS transistors

نوع: Conference Paper

نویسنده : Asenov, A.; Amoroso, S.M.; Gerrer, L.

ناشر: IEEE

سال: 2014

Direct Tunnelling Gate Leakage Variability in Nano-CMOS Transistors

نوع: Journal Paper

نویسنده : Markov, S.; Roy, S.; Asenov, A.

سال: 2010

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Statistical aspects of FinFET based SRAM metrics subject to process and statistical variability

نوع: Conference Paper

نویسنده : Xingsheng Wang; Binjie Cheng; Millar, C.; Reid, D.; Asenov, A.

ناشر: IEEE

سال: 2014

Simulation of 3D FinFET doping profiles introduced by ion implantation and the impact on device performance

نوع: Conference Paper

نویسنده : Liping Wang; Brown, A.; Cheng, B.; Asenov, A.

ناشر: IEEE

سال: 2014

A Self-Consistent Full 3-D Real-Space NEGF Simulator for Studying Nonperturbative Effects in Nano-MOSFETs

نوع: Journal Paper

نویسنده : Martinez, A.; Bescond, M.; Barker, J.R.; Svizhenko, A.; Anantram, M.P.; Millar, C.; Asenov, A.

سال: 2007

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3D coupled electro-thermal simulations for SOI FinFET with statistical variations including the fin shape dependence of the thermal conductivity

نوع: Conference Paper

نویسنده : Wang, L.; Brown, A.R.; Nedjalkov, M.; Alexander, C.; Cheng, B.; Millar, C.; Asenov, A.

ناشر: IEEE

سال: 2014

3D coupled electro-thermal FinFET simulations including the fin shape dependence of the thermal conductivity

نوع: Conference Paper

نویسنده : Wang, L.; Brown, A.R.; Nedjalkov, M.; Alexander, C.; Cheng, B.; Millar, C.; Asenov, A.

ناشر: IEEE

سال: 2014

3D atomistic simulations of bulk, FDSOI and Fin FETs sensitivity to oxide reliability

نوع: Conference Paper

نویسنده : Gerrer, L.; Amoroso, S.; Hussin, R.; Adamu-Lema, F.; Asenov, A.

ناشر: IEEE

سال: 2014

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Factoring variability in the Design/Technology Co Optimisation (DTCO) in advanced CMOS

Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFET\'s: A 3-D “atomistic” simulation study

Progress in the simulation of time dependent statistical variability in nano CMOS transistors

Direct Tunnelling Gate Leakage Variability in Nano-CMOS Transistors

Statistical aspects of FinFET based SRAM metrics subject to process and statistical variability

Simulation of 3D FinFET doping profiles introduced by ion implantation and the impact on device performance

A Self-Consistent Full 3-D Real-Space NEGF Simulator for Studying Nonperturbative Effects in Nano-MOSFETs

3D coupled electro-thermal simulations for SOI FinFET with statistical variations including the fin shape dependence of the thermal conductivity

3D coupled electro-thermal FinFET simulations including the fin shape dependence of the thermal conductivity

3D atomistic simulations of bulk, FDSOI and Fin FETs sensitivity to oxide reliability

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Factoring variability in the Design/Technology Co Optimisation (DTCO) in advanced CMOS

Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFET\'s: A 3-D “atomistic” simulation study

Progress in the simulation of time dependent statistical variability in nano CMOS transistors

Direct Tunnelling Gate Leakage Variability in Nano-CMOS Transistors

Statistical aspects of FinFET based SRAM metrics subject to process and statistical variability

Simulation of 3D FinFET doping profiles introduced by ion implantation and the impact on device performance

A Self-Consistent Full 3-D Real-Space NEGF Simulator for Studying Nonperturbative Effects in Nano-MOSFETs

3D coupled electro-thermal simulations for SOI FinFET with statistical variations including the fin shape dependence of the thermal conductivity

3D coupled electro-thermal FinFET simulations including the fin shape dependence of the thermal conductivity

3D atomistic simulations of bulk, FDSOI and Fin FETs sensitivity to oxide reliability