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نویسنده : Metzger, T.; Höpler, R.; Born, E.; Ambacher, O.; Stutzmann, M.; Stömmer, R.; Schuster, M.; Göbel, H.; Christiansen, S.; Albrecht, M.

سال: 1998

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Combining external cavity quantum cascade lasers and MOEMS technology: An approach for miniaturization and fast wavelength scanning

نوع: Conference Paper

نویسنده : Ambacher, O.; Ostendorf, R.; Bleh, D.; Merten, A.; Grahmann, J.; Schmidt, R.; Kunzer, M.; Hugger, S.; Wagner, J.

ناشر: IEEE

سال: 2014

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

نوع: Journal Paper

نویسنده : Ambacher, O.; Smart, J.; Shealy, J. R.; Weimann, N. G.; Chu, K.; Murphy, M.; Schaff, W. J.; Eastman, L. F.; Dimitrov, R.; Wittmer, L.; Stutzmann, M.; Rieger, W.; Hilsenbeck, J.

سال: 1999

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Wireless sub-THz communication system with high data rate enabled by RF photonics and active MMIC technology

نوع: Conference Paper

نویسنده : Koenig, S.; Lopez-Diaz, D.; Antes, J.; Boes, F.; Henneberger, R.; Leuther, A.; Tessmann, A.; Schmogrow, R.; Hillerkuss, D.; Palmer, R.; Zwick, T.; Koos, C.; Freude, W.; Ambacher, O.; Leuthold, J.; Kallfass, I.

ناشر: IEEE

سال: 2014

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Growth and applications of Group III-nitrides

Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications

Sound velocity of AlxGa1-xN thin films obtained by surface acoustic-wave measurements

High linearity active GaN-HEMT down-converter MMIC for E-band radar applications

Broadband 1.7–2.8 GHz high-efficiency (58%), high-power (43 dBm) Class-BJ GaN power amplifier including package engineering

Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry

Combining external cavity quantum cascade lasers and MOEMS technology: An approach for miniaturization and fast wavelength scanning

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

Wireless sub-THz communication system with high data rate enabled by RF photonics and active MMIC technology

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Growth and applications of Group III-nitrides

Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications

Sound velocity of AlxGa1-xN thin films obtained by surface acoustic-wave measurements

High linearity active GaN-HEMT down-converter MMIC for E-band radar applications

Broadband 1.7&#x2013;2.8 GHz high-efficiency (58%), high-power (43 dBm) Class-BJ GaN power amplifier including package engineering

Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry

Combining external cavity quantum cascade lasers and MOEMS technology: An approach for miniaturization and fast wavelength scanning

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

Wireless sub-THz communication system with high data rate enabled by RF photonics and active MMIC technology

Broadband 1.7–2.8 GHz high-efficiency (58%), high-power (43 dBm) Class-BJ GaN power amplifier including package engineering