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نمایش تعداد 1-10 از 89
فناوری حافظه های نیمه هادی فرّار: گذشته، حال و آینده
اهمیت و تاثیر صنعت الکترونیک بر زندگی بشر در قرن گذشته و در دوران کنونی بر کسی پوشیده نیست. این صنعت، همچنان در قرن 21، با روندی پرشتاب و مطمئن می رود تا با استفاده از فناوری نانو با رشد تکاملی و انقلابی خود با استفاده ...
On the extraction of the external drain and source resistors and effective channel length in Si-MOSFET
This paper focuses on the extraction of drain/source resistance and effective channel length (Leff) of the
silicon MOSFET in the linear drain current region. Leff is expressed as a function of drain/source resistance, ...
Uprising nano memories: Latest advances in monolithic three dimensional (3D) integrated Flash memories
Flash memory industry has showed remarkable steady progress during the last few years. This achievement is owed to the development of the 3D NAND Flash structures. This paper reviews the latest advances in the monolithic ...
Static thermal design of quasi monolithic technology (QMT) for realization of power microwave and millimeter wave circuits
In this paper, a 2D finite element heat transfer simulation was used to optimize the quasi monolithic technology (QMT) structure and to reduce thermal resistance in power microwave and millimeter wave applications, considering ...
A Collector-Up SiGe-HBT for High Frequency Applications
A new method for realization of a collector-up
SiGe-HBT on SOI substrate for high frequency applications is
introduced and its dc and ac characteristics are predicted using a
two dimensional device ...
Electromagnetic Shielding of Metal Enclosures with Apertures
Electromagnetic interference (EMI) has become a major problem for electrical and electronic engineers, and it is likely to become even more severe in the future because of highly integrated new circuits and their higher ...
An extended drain current conductance extraction method and its application to DRAM support and array devices
In this paper an extended drain-current conductance method is introduced, which can be used for extraction of separated drain and source resistors, forward and reversed modes carrier mobilities and effective channel length ...