Search

نمایش تعداد 1-10 از 13

Separation of Corner Component in TAT Mechanism in Retention Characteristics of Sub 20-nm NAND Flash Memory

نوع: Journal Paper

نویسنده : Kyunghwan Lee; Myounggon Kang; Seongjun Seo; Duckseoung Kang; Dong Hua Li; Yuchul Hwang; Hyungcheol Shin

ناشر: IEEE

سال: 2014

Probability Level Dependence of Failure Mechanisms in Sub-20 nm NAND Flash Memory

نوع: Journal Paper

نویسنده : Duckseoung Kang; Kyunghwan Lee; Myounggon Kang; Seongjun Seo; Dong Hua Li; Yuchul Hwang; Hyungcheol Shin

ناشر: IEEE

سال: 2014

[Title page]

نوع: Conference Paper

ناشر: IEEE

سال: 2014

Sparse representations in nested non-linear models

نوع: Conference Paper

نویسنده : Dré meau, A. , Hé as, P. , Herzet, C.

ناشر: IEEE

سال: 2014

Research paradigms and topics in Enterprise Engineering analysis of recent conferences and workshops

نوع: Conference Paper

نویسنده : Molnar, W.A. , Korhonen, J.J.

ناشر: IEEE

سال: 2014

The input shaping control of eletro-thermal MEMS micromirror

نوع: Conference Paper

نویسنده : Minghui Shi , Hao Zhang , Qiao Chen

ناشر: IEEE

سال: 2014

Thin-Film Transistor <inline-formula> <img src="/images/tex/21665.gif" alt="V_{\\rm th}"> </inline-formula> Shift Model Based on Kinetics of Electron Transfer in Gate Dielectric

نوع: Journal Paper

نویسنده : Wang, Lisa Ling; Liu, Tony Chi; Yuying Cai; Shengdong Zhang

ناشر: IEEE

سال: 2014

Investigations of Conduction Mechanisms of the Self-Rectifying n<sup>+</sup>Si-HfO<sub>2</sub>–Ni RRAM Devices

نوع: Journal Paper

نویسنده : Dongyi Lu; Yadong Zhao; Tran Xuan Anh; Yu Hong Yu; Daming Huang; Yinyin Lin; Shi-Jin Ding; Peng-Fei Wang; Ming-Fu Li

ناشر: IEEE

سال: 2014

نویسنده : Rooyackers, R.; Vandooren, A.; Verhulst, A.S.; Walke, A.M.; Simoen, E.; Devriendt, K.; Lo-Corotondo, S.; Demand, M.; Bryce, G.; Loo, R.; Hikavyy, A.; Vandeweyer, T.; Huyghebaert, C.; Collaert, N.; Thean, A.V.Y.

ناشر: IEEE

سال: 2014

VHF Narrowband Relay for LOS Extension

نوع: Conference Paper

نویسنده : Cohen, Aaron E.; Kennedy, Edward J.; Rupar, Michael A.

ناشر: IEEE

سال: 2014

Search

Separation of Corner Component in TAT Mechanism in Retention Characteristics of Sub 20-nm NAND Flash Memory

Probability Level Dependence of Failure Mechanisms in Sub-20 nm NAND Flash Memory

[Title page]

Sparse representations in nested non-linear models

Research paradigms and topics in Enterprise Engineering analysis of recent conferences and workshops

The input shaping control of eletro-thermal MEMS micromirror

Thin-Film Transistor <inline-formula> <img src="/images/tex/21665.gif" alt="V_{\\rm th}"> </inline-formula> Shift Model Based on Kinetics of Electron Transfer in Gate Dielectric

Investigations of Conduction Mechanisms of the Self-Rectifying n<sup>+</sup>Si-HfO<sub>2</sub>–Ni RRAM Devices

Untitled

VHF Narrowband Relay for LOS Extension

نویسنده

ناشر

سال

کلیدواژه

نوع

زبان

نوع محتوا

عنوان ناشر

Search

Filters

Separation of Corner Component in TAT Mechanism in Retention Characteristics of Sub 20-nm NAND Flash Memory

Probability Level Dependence of Failure Mechanisms in Sub-20 nm NAND Flash Memory

[Title page]

Sparse representations in nested non-linear models

Research paradigms and topics in Enterprise Engineering analysis of recent conferences and workshops

The input shaping control of eletro-thermal MEMS micromirror

Thin-Film Transistor <inline-formula> <img src="/images/tex/21665.gif" alt="V_{\\rm th}"> </inline-formula> Shift Model Based on Kinetics of Electron Transfer in Gate Dielectric

Investigations of Conduction Mechanisms of the Self-Rectifying n<sup>&#x002B;</sup>Si-HfO<sub>2</sub>&#x2013;Ni RRAM Devices

Untitled

VHF Narrowband Relay for LOS Extension

Investigations of Conduction Mechanisms of the Self-Rectifying n<sup>+</sup>Si-HfO<sub>2</sub>–Ni RRAM Devices