Search
CSV
RISComparison of Steady-State and Transient Electron Transport in InAs, InP and GaAs
An ensemble Monte Carlo simulation is used to compare high field electron transport in bulk InAs, InP AND GaAs.
ENO Scheme for Steady and Transient Compressible Flow in Pressure-Based Method
is used for solution of Euler equations on a nonorthogonal mesh with collocated finite volume formulation. The developed scheme is applied to the computation of steady subsonic and transonic flows over a bump-in-channel geometry as well as to the transient...
Range renewal structure of transient simple random walk
Temperature and Doping Dependencies of Electron Mobility in InN, AlN and GaN
Temperature and doping dependencies of
electron mobility in InN, AlN and GaN structures have
been calculated using an ensemble Monte Carlo
simulation. Electronic states within the conduction ...
Study of High Field Electron Transport in AlN and AlGaN Semiconductors Using Monte Carlo Simulation
a value above a certain critical field .This critical field is
strongly dependent on the material parameters. Transient
velocity overshoot has also been simulated, with the sudden
application of fields up to1000 kV/m , appropriate...
Comparison of High Field Electron Transport in Wurtzite Phase of GaN and AlGaN
The results of an ensemble Monte Carlo
simulation of the steady-state and transient electron drift
velocity as a function of applied electric field in GaN and
AlGaN are presented. The effect of temperature and...
Transient response of finned-tube condenser in household refrigerators
A distributed parameter model for prediction of the transient performance of a condenser is presented. The model is capable of predicting the refrigerant temperature distribution, tube wall temperature, quality of refrigerant, inventory mass...