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نمایش تعداد 1-4 از 4
Al2O3 Potential as a Gate Dielectric of the Next Nano MISFET Transistor
سال: 2009
خلاصه:
The current gate dielectric thickness of MOSFET (metal- oxide-semiconductor-field-effect-transistor) is down to 1 nm which can not prevent boron diffusion from electrodes through the ultra thin gate oxide.
Experimental study on thermal analysis of a novel shell and tube heat exchanger with corrugated tubes
سال: 2019
خلاصه:
In this paper, a novel study on the heat transfer characteristics in a shell and tube heat exchanger with wavy cosine
corrugated wall in structure of tube bundle is investigated experimentally. The optimization procedure ...