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نمایش تعداد 1-10 از 74

Characterization of the Proximity Effect From Tungsten TSVs on 130-nm CMOS Devices in 3-D ICs

نوع: Journal Paper

نویسنده : Sangwook Han; Wentzloff, David D.

ناشر: IEEE

سال: 2014

Post-Silicon Characterization and On-Line Prediction of Transient Thermal Field in Integrated Circuits Using Thermal System Identification

نوع: Journal Paper

نویسنده : Minki Cho; Ahmed, Khondker Zakir; Song, William J.; Yalamanchili, Sudhakar; Mukhopadhyay, Saibal

ناشر: IEEE

سال: 2014

Polar Quantizer for Wireless Receivers: Theory, Analysis, and CMOS Implementation

نوع: Journal Paper

نویسنده : Nazari, Peyman; Byung-Kwan Chun; Tzeng, Fred; Heydari, Payam

ناشر: IEEE

سال: 2014

A 60-dB Gain OTA Operating at 0.25-V Power Supply in 130-nm Digital CMOS Process

نوع: Journal Paper

نویسنده : Ferreira, Luis H. C.; Sonkusale, Sameer R.

ناشر: IEEE

سال: 2014

Resilient Pipeline Under Supply Noise With Programmable Time Borrowing and Delayed Clock Gating

نوع: Journal Paper

نویسنده : Kwanyeob Chae; Mukhopadhyay, Saibal

ناشر: IEEE

سال: 2014

DSP aided chromatic dispersion reckoning in single carrier high speed coherent optical communications

نوع: Conference Paper

ناشر: IEEE

سال: 2014

The energy benefit of level-crossing sampling including the actuator's energy consumption

نوع: Conference Paper

نویسنده : Hensel, B. , Kabitzsch, K.

ناشر: IEEE

سال: 2014

Complementary resistive switch based stateful logic operations using material implication

نوع: Conference Paper

ناشر: IEEE

سال: 2014

Symmetric Coherent Link Degree, Adaptive Throughput-Transmission Power for Wireless Sensor Networks

نوع: Conference Paper

ناشر: IEEE

سال: 2014

Multilevel descriptive experiment design regularization framework for sparsity preserving enhancement of radar imagery in harsh sensing environments

نوع: Conference Paper

ناشر: IEEE

سال: 2014

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Characterization of the Proximity Effect From Tungsten TSVs on 130-nm CMOS Devices in 3-D ICs

Post-Silicon Characterization and On-Line Prediction of Transient Thermal Field in Integrated Circuits Using Thermal System Identification

Polar Quantizer for Wireless Receivers: Theory, Analysis, and CMOS Implementation

A 60-dB Gain OTA Operating at 0.25-V Power Supply in 130-nm Digital CMOS Process

Resilient Pipeline Under Supply Noise With Programmable Time Borrowing and Delayed Clock Gating

DSP aided chromatic dispersion reckoning in single carrier high speed coherent optical communications

The energy benefit of level-crossing sampling including the actuator's energy consumption

Complementary resistive switch based stateful logic operations using material implication

Symmetric Coherent Link Degree, Adaptive Throughput-Transmission Power for Wireless Sensor Networks

Multilevel descriptive experiment design regularization framework for sparsity preserving enhancement of radar imagery in harsh sensing environments

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Characterization of the Proximity Effect From Tungsten TSVs on 130-nm CMOS Devices in 3-D ICs

Post-Silicon Characterization and On-Line Prediction of Transient Thermal Field in Integrated Circuits Using Thermal System Identification

Polar Quantizer for Wireless Receivers: Theory, Analysis, and CMOS Implementation

A 60-dB Gain OTA Operating at 0.25-V Power Supply in 130-nm Digital CMOS Process

Resilient Pipeline Under Supply Noise With Programmable Time Borrowing and Delayed Clock Gating

DSP aided chromatic dispersion reckoning in single carrier high speed coherent optical communications

The energy benefit of level-crossing sampling including the actuator's energy consumption

Complementary resistive switch based stateful logic operations using material implication

Symmetric Coherent Link Degree, Adaptive Throughput-Transmission Power for Wireless Sensor Networks

Multilevel descriptive experiment design regularization framework for sparsity preserving enhancement of radar imagery in harsh sensing environments