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نمایش تعداد 1-10 از 12

Steering performance test of underwater mining robot

نوع: Conference Paper

نویسنده : Yeu, Tae-Kyeong; Yoon, Suk-Min; Hong, Sup; Kim, Hyung-Woo; Lee, Chang-Ho; Kim, Jin-Ho; Min, Cheon-Hong; Choi, Jong-Su

ناشر: IEEE

سال: 2014

Design of a Temperature-Aware Low-Voltage SRAM With Self-Adjustable Sensing Margin Enhancement for High-Temperature Applications up to 300 °C

نوع: Journal Paper

نویسنده : Kim, Tony Tae-Hyoung; Ngoc Le Ba

ناشر: IEEE

سال: 2014

Optimization Scheme to Minimize Reference Resistance Distribution of Spin-Transfer-Torque MRAM

نوع: Journal Paper

نویسنده : Kejie Huang; Ning Ning; Yong Lian

ناشر: IEEE

سال: 2014

A Split-Path Sensing Circuit for Spin Torque Transfer MRAM

نوع: Journal Paper

نویسنده : Jisu Kim; Taehui Na; Jung Pill Kim; Kang, S.H.; Seong-Ook Jung

ناشر: IEEE

سال: 2014

Variation-Tolerant High-Reliability Sensing Scheme for Deep Submicrometer STT-MRAM

نوع: Journal Paper

نویسنده : Wang Kang; Zheng Li; Zhaohao Wang; Deng, Erya; Klein, Jacques-Olivier; Youguang Zhang; Chappert, Claude; Ravelosona, Dafine; Weisheng Zhao

ناشر: IEEE

سال: 2014

Variation-Tolerant and Disturbance-Free Sensing Circuit for Deep Nanometer STT-MRAM

نوع: Journal Paper

نویسنده : Wang Kang; Zheng Li; Klein, Jacques-Olivier; Yuanqing Chen; Youguang Zhang; Ravelosona, Dafine; Chappert, Claude; Weisheng Zhao

ناشر: IEEE

سال: 2014

Reference-Scheme Study and Novel Reference Scheme for Deep Submicrometer STT-RAM

نوع: Journal Paper

نویسنده : Taehui Na; Jisu Kim; Jung Pill Kim; Kang, S.H.; Seong-Ook Jung

ناشر: IEEE

سال: 2014

Non-Volatile Complementary Polarizer Spin-Transfer Torque On-Chip Caches: A Device/Circuit/Systems Perspective

نوع: Journal Paper

نویسنده : Xuanyao Fong; Venkatesan, R.; Raghunathan, Anand; Roy, Kaushik

ناشر: IEEE

سال: 2014

Cost-Efficient Self-Terminated Write Driver for Spin-Transfer-Torque RAM and Logic

نوع: Journal Paper

نویسنده : Suzuki, Daisuke; Natsui, Masanori; Mochizuki, Akira; Hanyu, Takahiro

ناشر: IEEE

سال: 2014

STT-MRAM Sensing Circuit With Self-Body Biasing in Deep Submicron Technologies

نوع: Journal Paper

نویسنده : Jisu Kim; Kyungho Ryu; Jung Pill Kim; Kang, S.H.; Seong-Ook Jung

ناشر: IEEE

سال: 2014

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Steering performance test of underwater mining robot

Design of a Temperature-Aware Low-Voltage SRAM With Self-Adjustable Sensing Margin Enhancement for High-Temperature Applications up to 300 °C

Optimization Scheme to Minimize Reference Resistance Distribution of Spin-Transfer-Torque MRAM

A Split-Path Sensing Circuit for Spin Torque Transfer MRAM

Variation-Tolerant High-Reliability Sensing Scheme for Deep Submicrometer STT-MRAM

Variation-Tolerant and Disturbance-Free Sensing Circuit for Deep Nanometer STT-MRAM

Reference-Scheme Study and Novel Reference Scheme for Deep Submicrometer STT-RAM

Non-Volatile Complementary Polarizer Spin-Transfer Torque On-Chip Caches: A Device/Circuit/Systems Perspective

Cost-Efficient Self-Terminated Write Driver for Spin-Transfer-Torque RAM and Logic

STT-MRAM Sensing Circuit With Self-Body Biasing in Deep Submicron Technologies

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Steering performance test of underwater mining robot

Design of a Temperature-Aware Low-Voltage SRAM With Self-Adjustable Sensing Margin Enhancement for High-Temperature Applications up to 300 &#x00B0;C

Optimization Scheme to Minimize Reference Resistance Distribution of Spin-Transfer-Torque MRAM

A Split-Path Sensing Circuit for Spin Torque Transfer MRAM

Variation-Tolerant High-Reliability Sensing Scheme for Deep Submicrometer STT-MRAM

Variation-Tolerant and Disturbance-Free Sensing Circuit for Deep Nanometer STT-MRAM

Reference-Scheme Study and Novel Reference Scheme for Deep Submicrometer STT-RAM

Non-Volatile Complementary Polarizer Spin-Transfer Torque On-Chip Caches: A Device/Circuit/Systems Perspective

Cost-Efficient Self-Terminated Write Driver for Spin-Transfer-Torque RAM and Logic

STT-MRAM Sensing Circuit With Self-Body Biasing in Deep Submicron Technologies

Design of a Temperature-Aware Low-Voltage SRAM With Self-Adjustable Sensing Margin Enhancement for High-Temperature Applications up to 300 °C