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نمایش تعداد 1-10 از 247

Activation of Mg implanted in GaN by multicycle rapid thermal annealing

نوع: Journal Paper

نویسنده : Anderson, Travis J.; Feigelson, Boris N.; Kub, Francis J.; Tadjer, Marko J.; Hobart, Karl D.; Mastro, Michael /A/.; Hite, Jennifer K.; Eddy, Charles R.

ناشر: IET

سال: 2014

SPICE model of thyristors with amplifying gate and emitter-shorts

نوع: Journal Paper

نویسنده : Zekry, Abdelhalim /A/.; Sayah, Gihan Taha; Soliman, Fouad /A/.

ناشر: IET

سال: 2014

Time-varying IIR multi-notch filter based on all-pass filter prototype

نوع: Conference Paper

نویسنده : Kocon, Slawomir; Piskorowski, Jacek

ناشر: IEEE

سال: 2014

Effect of manganese doping on optical and magnetic properties of titanium dioxide nanostructures prepared by hydrothermal technique in the presence of thiourea

نوع: Journal Paper

نویسنده : Zamiri, Golnoush; Zakaria, A.; Hussein, M.Z.B.; Zamiri, R.; Rebelo, A.; Abbastabar Ahangar, H.

ناشر: IET

سال: 2014

Nitrogen-Terminated Semiconducting Zigzag GNR FET With Negative Differential Resistance

نوع: Journal Paper

نویسنده : Kumar, Ajit; Kumar, Vipin; Agarwal, Sankalp; Basak, Abhishek; Jain, Nikhil; Bulusu, Anand; Manhas, Sanjeev Kumar

ناشر: IEEE

سال: 2014

Circuit-Level Simulation of a CNTFET With Unevenly Positioned CNTs by Linear Programming

نوع: Journal Paper

نویسنده : Geunho Cho; Lombardi, Floriana

ناشر: IEEE

سال: 2014

Variable-Range Hopping and Thermal Activation Conduction of Y-Doped ZnO Nanocrystalline Films

نوع: Journal Paper

نویسنده : Lin, Tyrone T.; Young, S.L.; Kung, C.Y.; Chen, H.Z.; Kao, M.C.; Chang, M.C.; Ou, C.R.

ناشر: IEEE

سال: 2014

Fully Ion-Implanted and Screen-Printed 20.2% Efficient Front Junction Silicon Cells on 239 cm <formula formulatype="inline"> <img src="/images/tex/20705.gif" alt="^{\\bf 2}"> </formula> n-Type CZ Substrate

نوع: Journal Paper

نویسنده : Yuguo Tao; Young-Woo Ok; Zimbardi, Francesco; Upadhyaya, Ajay D.; Jiun-Hong Lai; Ning, Sheyang; Upadhyaya, Vijaykumar D.; Rohatgi, Ajeet

ناشر: IEEE

سال: 2014

Two-Dimensional Numerical Model and Turn-On Performance Simulation of Reversely Switched Dynistor

نوع: Journal Paper

نویسنده : Lin Liang; Quan Wei; Yuehui Yu

ناشر: IEEE

سال: 2014

Evolution of Unified-RAM: 1T-DRAM and BE-SONOS Built on a Highly Scaled Vertical Channel

نوع: Journal Paper

نویسنده : Dong-Il Moon; Jee-Yeon Kim; Joon-Bae Moon; Dong-Oh Kim; Yang-Kyu Choi

ناشر: IEEE

سال: 2014

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Activation of Mg implanted in GaN by multicycle rapid thermal annealing

SPICE model of thyristors with amplifying gate and emitter-shorts

Time-varying IIR multi-notch filter based on all-pass filter prototype

Effect of manganese doping on optical and magnetic properties of titanium dioxide nanostructures prepared by hydrothermal technique in the presence of thiourea

Nitrogen-Terminated Semiconducting Zigzag GNR FET With Negative Differential Resistance

Circuit-Level Simulation of a CNTFET With Unevenly Positioned CNTs by Linear Programming

Variable-Range Hopping and Thermal Activation Conduction of Y-Doped ZnO Nanocrystalline Films

Fully Ion-Implanted and Screen-Printed 20.2% Efficient Front Junction Silicon Cells on 239 cm <formula formulatype="inline"> <img src="/images/tex/20705.gif" alt="^{\\bf 2}"> </formula> n-Type CZ Substrate

Two-Dimensional Numerical Model and Turn-On Performance Simulation of Reversely Switched Dynistor

Evolution of Unified-RAM: 1T-DRAM and BE-SONOS Built on a Highly Scaled Vertical Channel

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Activation of Mg implanted in GaN by multicycle rapid thermal annealing

SPICE model of thyristors with amplifying gate and emitter-shorts

Time-varying IIR multi-notch filter based on all-pass filter prototype

Effect of manganese doping on optical and magnetic properties of titanium dioxide nanostructures prepared by hydrothermal technique in the presence of thiourea

Nitrogen-Terminated Semiconducting Zigzag GNR FET With Negative Differential Resistance

Circuit-Level Simulation of a CNTFET With Unevenly Positioned CNTs by Linear Programming

Variable-Range Hopping and Thermal Activation Conduction of Y-Doped ZnO Nanocrystalline Films

Fully Ion-Implanted and Screen-Printed 20.2% Efficient Front Junction Silicon Cells on 239 cm <formula formulatype="inline"> <img src="/images/tex/20705.gif" alt="^{\\bf 2}"> </formula> n-Type CZ Substrate

Two-Dimensional Numerical Model and Turn-On Performance Simulation of Reversely Switched Dynistor

Evolution of Unified-RAM: 1T-DRAM and BE-SONOS Built on a Highly Scaled Vertical Channel