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نمایش تعداد 1-10 از 75

A High Density 250<inline-formula> <img src="/images/tex/21629.gif" alt="^{\\circ}{\\rm C}"> </inline-formula> Junction Temperature SiC Power Module Development

نوع: Journal Paper

نویسنده : Puqi Ning; Fei Wang; Di Zhang

ناشر: IEEE

سال: 2014

Considerations for sending a breaker trip command over great distances for the purpose of arc flash mitigation

نوع: Conference Paper

نویسنده : Proctor, M.

ناشر: IEEE

سال: 2014

SiC and GaN devices - wide bandgap is not all the same

نوع: Journal Paper

نویسنده : Kaminski, N.; Hilt, O.

ناشر: IET

سال: 2014

The study of electromagnetic transient simulation in whole scene intelligent substation test method

نوع: Conference Paper

نویسنده : Wang Biao

ناشر: IEEE

سال: 2014

Triangular FM Based Discrete Frequency-Coding Waveform Sets

نوع: Conference Paper

نویسنده : Qazi, Farhan A.

ناشر: IEEE

سال: 2014

Thermomechanical Assessment of Die-Attach Materials for Wide Bandgap Semiconductor Devices and Harsh Environment Applications

نوع: Journal Paper

نویسنده : Navarro, Luis /A/.; Perpina, Xavier; Godignon, P.; Montserrat, J.; Banu, V.; Vellvehi, Miquel; Jorda, Xavier

ناشر: IEEE

سال: 2014

Stray Inductance Reduction of Commutation Loop in the P-cell and N-cell-Based IGBT Phase Leg Module

نوع: Journal Paper

نویسنده : Shengnan Li; Tolbert, Leon M.; Fei Wang; Fang Zheng Peng

ناشر: IEEE

سال: 2014

Evaluation of Encapsulation Materials for High-Temperature Power Device Packaging

نوع: Journal Paper

نویسنده : Locatelli, M.-L.; Khazaka, Rami; Diaham, S.; Cong-Duc Pham; Bechara, M.; Dinculescu, Sorin; Bidan, Pierre

ناشر: IEEE

سال: 2014

Mechanism of Migration of Sintered Nanosilver at High Temperatures in Dry Air for Electronic Packaging

نوع: Journal Paper

نویسنده : Guo-Quan Lu; Wen Yang; Yun-Hui Mei; Xin Li; Gang Chen; Xu Chen

ناشر: IEEE

سال: 2014

Modeling the Influence of Selected Factors on Thermal Resistance of Semiconductor Devices

نوع: Journal Paper

نویسنده : Gorecki, Krzysztof; Zarebski, Janusz

ناشر: IEEE

سال: 2014

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A High Density 250<inline-formula> <img src="/images/tex/21629.gif" alt="^{\\circ}{\\rm C}"> </inline-formula> Junction Temperature SiC Power Module Development

Considerations for sending a breaker trip command over great distances for the purpose of arc flash mitigation

SiC and GaN devices - wide bandgap is not all the same

The study of electromagnetic transient simulation in whole scene intelligent substation test method

Triangular FM Based Discrete Frequency-Coding Waveform Sets

Thermomechanical Assessment of Die-Attach Materials for Wide Bandgap Semiconductor Devices and Harsh Environment Applications

Stray Inductance Reduction of Commutation Loop in the P-cell and N-cell-Based IGBT Phase Leg Module

Evaluation of Encapsulation Materials for High-Temperature Power Device Packaging

Mechanism of Migration of Sintered Nanosilver at High Temperatures in Dry Air for Electronic Packaging

Modeling the Influence of Selected Factors on Thermal Resistance of Semiconductor Devices

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A High Density 250<inline-formula> <img src="/images/tex/21629.gif" alt="^{\\circ}{\\rm C}"> </inline-formula> Junction Temperature SiC Power Module Development

Considerations for sending a breaker trip command over great distances for the purpose of arc flash mitigation

SiC and GaN devices - wide bandgap is not all the same

The study of electromagnetic transient simulation in whole scene intelligent substation test method

Triangular FM Based Discrete Frequency-Coding Waveform Sets

Thermomechanical Assessment of Die-Attach Materials for Wide Bandgap Semiconductor Devices and Harsh Environment Applications

Stray Inductance Reduction of Commutation Loop in the P-cell and N-cell-Based IGBT Phase Leg Module

Evaluation of Encapsulation Materials for High-Temperature Power Device Packaging

Mechanism of Migration of Sintered Nanosilver at High Temperatures in Dry Air for Electronic Packaging

Modeling the Influence of Selected Factors on Thermal Resistance of Semiconductor Devices