Search

نمایش تعداد 1-10 از 15

Correlation modeling among multi-wind farms based on Copula-ARMA wind speed model

نوع: Conference Paper

نویسنده : Xu, Qiong; Chen, Li-juan; Zeng, Ping-liang; Xu, Xiao-hui

ناشر: IEEE

سال: 2014

Extension of Planar Bulk n-Channel MOSFET Scaling With Oxygen Insertion Technology

نوع: Journal Paper

نویسنده : Nuo Xu; Takeuchi, H.; Damrongplasit, Nattapol; Stephenson, Robert J.; Xiangyang Huang; Cody, Nyles W.; Hytha, Marek; Mears, Robert J.; Tsu-Jae King Liu

ناشر: IEEE

سال: 2014

Compact diamond MOSFET model accounting for PAMDLE applicable down 150 nm node

نوع: Journal Paper

نویسنده : Gimenez, Salvador Pinillos; Davini, E.; Peruzzi, V.V.; Renaux, Christian; Flandre, Denis

ناشر: IET

سال: 2014

CMOS Differential and Amplified Dosimeter with Field Oxide N-Channel MOSFETs

نوع: Journal Paper

نویسنده : Carbonetto, S.; GarcianInza, M.; Lipovetzky, J.; Carra, M.J.; Redin, E.; Sambuco Salomone, L.; Faigon, A.

ناشر: IEEE

سال: 2014

Enhancing the Performance of Germanium Channel nMOSFET Using Phosphorus Dopant Segregation

نوع: Journal Paper

نویسنده : Che-Wei Chen; Ju-Yuan Tzeng; Cheng-Ting Chung; Hung-Pin Chien; Chao-Hsin Chien; Guang-Li Luo; Pei-Yu Wang; Bing-Yue Tsui

ناشر: IEEE

سال: 2014

Impact of Plasma Postoxidation Temperature on the Electrical Properties of <formula formulatype="inline"> <img src="/images/tex/21365.gif" alt="{\\rm Al}_{2}{\\rm O}_{3}/{\\rm GeO}_{x}/{\\rm Ge}"> </formula> pMOSFETs and nMOSFETs

نوع: Journal Paper

نویسنده : Rui Zhang; Ju-Chin Lin; Xiao Yu; Takenaka, Mitsuru; Takagi, Shinichi

ناشر: IEEE

سال: 2014

Self-Aligned and Non-Self-Aligned Contact Metallization in InGaAs Metal–Oxide-Semiconductor Field-Effect Transistors: A Simulation Study

نوع: Journal Paper

نویسنده : Kong, Eugene Y.-J; Yee-Chia Yeo

ناشر: IEEE

سال: 2014

Improved surge protection of flip-chip gallium nitride-based HEMTs by metal-semiconductor-metal two-dimensional electron gas varactor

نوع: Conference Paper

نویسنده : Chang, Liann-Be; Shih, Chien-Fu; Huang, Tung-Wuu; Tien, Chu-Yeh; Kuei, Ping-Yu

ناشر: IEEE

سال: 2014

An energy-aware fault tolerant scheduling framework for soft error resilient cloud computing systems

نوع: Conference Paper

نویسنده : Yue Gao , Gupta, S.K. , Yanzhi Wang , Pedram, M.

ناشر: IEEE

سال: 2014

Blank page

نوع: Conference Paper

ناشر: IEEE

سال: 2014

Search

Correlation modeling among multi-wind farms based on Copula-ARMA wind speed model

Extension of Planar Bulk n-Channel MOSFET Scaling With Oxygen Insertion Technology

Compact diamond MOSFET model accounting for PAMDLE applicable down 150 nm node

CMOS Differential and Amplified Dosimeter with Field Oxide N-Channel MOSFETs

Enhancing the Performance of Germanium Channel nMOSFET Using Phosphorus Dopant Segregation

Impact of Plasma Postoxidation Temperature on the Electrical Properties of <formula formulatype="inline"> <img src="/images/tex/21365.gif" alt="{\\rm Al}_{2}{\\rm O}_{3}/{\\rm GeO}_{x}/{\\rm Ge}"> </formula> pMOSFETs and nMOSFETs

Self-Aligned and Non-Self-Aligned Contact Metallization in InGaAs Metal–Oxide-Semiconductor Field-Effect Transistors: A Simulation Study

Improved surge protection of flip-chip gallium nitride-based HEMTs by metal-semiconductor-metal two-dimensional electron gas varactor

An energy-aware fault tolerant scheduling framework for soft error resilient cloud computing systems

Blank page

نویسنده

ناشر

سال

کلیدواژه

نوع

زبان

نوع محتوا

عنوان ناشر

Search

Filters

Correlation modeling among multi-wind farms based on Copula-ARMA wind speed model

Extension of Planar Bulk n-Channel MOSFET Scaling With Oxygen Insertion Technology

Compact diamond MOSFET model accounting for PAMDLE applicable down 150 nm node

CMOS Differential and Amplified Dosimeter with Field Oxide N-Channel MOSFETs

Enhancing the Performance of Germanium Channel nMOSFET Using Phosphorus Dopant Segregation

Impact of Plasma Postoxidation Temperature on the Electrical Properties of <formula formulatype="inline"> <img src="/images/tex/21365.gif" alt="{\\rm Al}_{2}{\\rm O}_{3}/{\\rm GeO}_{x}/{\\rm Ge}"> </formula> pMOSFETs and nMOSFETs

Self-Aligned and Non-Self-Aligned Contact Metallization in InGaAs Metal&#x2013;Oxide-Semiconductor Field-Effect Transistors: A Simulation Study

Improved surge protection of flip-chip gallium nitride-based HEMTs by metal-semiconductor-metal two-dimensional electron gas varactor

An energy-aware fault tolerant scheduling framework for soft error resilient cloud computing systems

Blank page

Self-Aligned and Non-Self-Aligned Contact Metallization in InGaAs Metal–Oxide-Semiconductor Field-Effect Transistors: A Simulation Study