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RISEfficiency enhancement by employing the transistor nonlinear capacitors effects in a 6W hybrid X-band Class-J power amplifier
This article presents the design and fabrication of a 6 W X-band hybrid Class-J power amplifier (PA) based on a bare die GaN on SiC HEMT by accurate implementing the transistor nonlinear capacitor effects. The transistor ...
Systematic Design of Hybrid High Power Microwave Amplifiers Using Large Gate Periphery GaN HEMTs
In this paper, a design methodology for realization of hybrid microwave power amplifiers (PAs) using discrete GaN HEMTs is systematically explained. High power solid-state amplifiers usually suffer from self-heating, high frequency instability...
Design and Fabrication of Hybrid 30-watt X-band GaN-based Amplifier
-band frequency. According to these considerations, a 30- watt power amplifier with a GaN-HEMT transistor over 8.8 to 9.8GHz has been designed and fabricated. The power gain,power added efficiency and 1dB compression point of the fabricated circuit are 9.2dB, 53...
Investigation of A I GaNIGaN HEMTs with step aluminum mole fraction and doping level in the barrier layer
Gallium-nitride (GaN) high electron mobility transistors (HEMTs) with step aluminum mole fraction or doping concentration in the barrier is reported. The barrier layer is divided into two Source Side (SS) and Drain Side ...