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نمایش تعداد 1-10 از 87
A graphite based STT-RAM cell with reduction in switching current
سال: 2015
خلاصه:
for 90 and 22 nm cell width respectively by passing sufficient current (100 mA with 0.1 ns pulse width) through the tunnel barrier. Simulations are done using Object Oriented MicroMagnetic Framework(OOMMF)....
Graphene-Based STT-RAM Cell With Improved Switching for Scaled Technology Nodes
سال: 2016
خلاصه:
. Simulation results are obtained using an object-oriented micromagnetic framework....
Ethics and privacy in national security and critical infrastructure protection
ناشر: IEEE
سال: 2014
Fast Moving Multiple Magnetic Bits in Permalloy Cylindrical Nanowires
ناشر: IEEE
سال: 2014