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نمایش تعداد 1-10 از 263
Perpendicular STT_RAM cell in 8 nm technology node using Co1/Ni3(1 1 1)
Gr2
سال: 2018
خلاصه:
product of a P-MTJ in order to avoid a high write voltage as technology is scaled down. A new graphene based STT-RAM cell for 8 nm technology node that uses high perpendicular magnetic anisotropy cobalt/
nickel (Co/Ni) multilayer as magnetic layers...
Natural nanomorphous Ni/NiO magnetic multilayers: Structure and magnetism of the high Ar pressure series
ناشر: American Scientific Publishers
سال: 2014
Discriminative dictionary learning via mutual exclusion
ناشر: IEEE
سال: 2014
Swarm optimization techniques for multi-agent source localization
ناشر: IEEE
سال: 2014
Magnetic Anisotropy Evolution in CoFe/Au Barcode Nanowire Arrays
ناشر: IEEE
سال: 2014