Iterative technique is used to solve Boltzmann

transport equation in bulk wurtzite phase GaN and AlN at

central valley conduction band. The electron mobility is

calculated as a function of temperature and ionized-

impurity...

Electron mobility in CdTe and HgCdTe are

calculated, by solving Boltzmann equation using iteration

model, as a function of temperature for carrier

concentrations of 1016, 1017, and 1018 cm-3. Both CdTe ...

model that includes numerical formulations

of the phonon scattering rates and ionized impurity

scattering rates. For two materials, we find that electron

velocity overshoot only occurs when the electric field in

increased to a...

— Temperature and doping dependencies of

electron mobility in InGaN structure has been calculated in

steady-state and transient situation. The following

scattering mechanisms, i.e, impurity, polar optical phonon...

valleys ensemble

Monte Carlo model that includes numerical formulations

of the phonon scattering rates and ionized impurity

scattering rates. For two materials, we find that electron

velocity overshoot only...

mobility in GaN and InN are

calculated, by solving Boltzmann equation using iteration

model, as a function of temperature for carrier

concentrations of 1016, 1017, and 1018 cm-3. Both GaN and

InN ...

Temperature and doping dependencies of electron mobility in ZnO semiconductor has been calculated using an iterative

technique. The following scattering mechanisms, i.e., impurity, polar optical phonon, acoustic phonon, piezoelectric, and...

a b s t r a c t

In thiswork,wepresentatheoreticalstudyontheconductanceof trans-polyacetylene(trans-PA)

nanowireinthepresenceofimpuritiesanduseof trans-PA asamolecularbridgesandwichedbetween

two ...

The electron mobility of ZnS and ZnSe semiconductor compounds were calculated by using the

iteration method. We considered polar optical phonon scattering, deformation potential acoustic,

piezoelectric and ionized impurity scattering...