Search
CSV
RISDistributive radiation characterization based on the PEEC method
ناشر: IEEE
سال: 2014
Operational data classes for establishing situational awareness in cyberspace
ناشر: IEEE
سال: 2014
Defect-Centric Distribution of Channel Hot Carrier Degradation in Nano-MOSFETs
ناشر: IEEE
سال: 2014
Measurement-based models for crosstalk within a connector shell
ناشر: IEEE
سال: 2014
Reducing Short Channel Effects in Dual Gate SOI-MOSFETs with a Drain Dependent Gate Bias
سال: 2010
خلاصه:
characteristics, a two–dimensional (2-D) analytical model for the surface potential variation along the channel is developed. A comparison between our structure and the single-gate (SG) SOI MOSFET demonstrates that short channel effects like, hot carriers effect...