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نمایش تعداد 1-10 از 409

Design of low-leakage multi-port SRAM for register file in graphics processing unit

نوع: Conference Paper

نویسنده : Shen-Fu Hsiao , Pu-Cheng Wu

ناشر: IEEE

سال: 2014

Relaxing CFL limit of FDTD by DWT

نوع: Journal Paper

نویسنده : Zheng Sun; Li-Hua Shi; Ying-Hui Zhou

ناشر: IET

سال: 2014

An Improved Time-Reversal-Based Target Localization for Through-Wall Microwave Imaging

نوع: Conference Paper

نویسنده : A.B, Gorji; B, Zakeri

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Analysis of femtosecond optical pulse propagation in one-dimensional nonlinear photonic crystals using finite-difference time-domain method

نوع: Journal Paper

نویسنده : مهرداد شکوه صارمی; میرمجتبی میرصالحی; Mehrdad Shokooh-Saremi; Mir Mojtaba Mirsalehi

سال: 2005

خلاصه:

In this paper, we have used the finite-difference time-domain (FDTD) method to analyze the optical pulse propagation in a nonlinear, one-dimensional photonic crystal (1DPC). Hyperbolic secant pulses with various carrier wavelengths are utilized...

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نوع: Journal Paper

ناشر: IET

سال: 2014

Digital noise spectroscopy system and its application to solar cells

نوع: Conference Paper

نویسنده : Mehrabian, A.; Hoheisel, R.; Nagel, D.J.; Messenger, S.R.; Maximenko, S.

ناشر: IEEE

سال: 2014

High-performance MoS<inf>2</inf> field-effect transistors enabled by chloride doping: Record low contact resistance (0.5 kΩ·µm) and record high drain current (460 µA/µm)

نوع: Conference Paper

ناشر: IEEE

سال: 2014

Fast Analysis of Reverberation Chamber Using FDTD Method and Matrix Pencil Method With New Criterion for Determining the Number of Exponentially Damped Sinusoids

نوع: Journal Paper

نویسنده : Yaozhong Cui; Guanghui Wei; Song Wang; Lisi Fan; Yang Zhao

ناشر: IEEE

سال: 2014

A New Efficient Algorithm for 3-D Laguerre-Based Finite-Difference Time-Domain Method

نوع: Journal Paper

نویسنده : Zheng Chen; Yan-Tao Duan; Ye-Rong Zhang; Hai-Lin Chen; Yun Yi

ناشر: IEEE

سال: 2014

Optimized Programs for Shaped Conductive Backfill Material of Grounding Systems Based on the FDTD Simulations

نوع: Journal Paper

نویسنده : Run Xiong; Bin Chen; Bi-Hua Zhou; Cheng Gao

ناشر: IEEE

سال: 2014

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Design of low-leakage multi-port SRAM for register file in graphics processing unit

Relaxing CFL limit of FDTD by DWT

An Improved Time-Reversal-Based Target Localization for Through-Wall Microwave Imaging

Analysis of femtosecond optical pulse propagation in one-dimensional nonlinear photonic crystals using finite-difference time-domain method

In the zone

Digital noise spectroscopy system and its application to solar cells

High-performance MoS<inf>2</inf> field-effect transistors enabled by chloride doping: Record low contact resistance (0.5 kΩ·µm) and record high drain current (460 µA/µm)

Fast Analysis of Reverberation Chamber Using FDTD Method and Matrix Pencil Method With New Criterion for Determining the Number of Exponentially Damped Sinusoids

A New Efficient Algorithm for 3-D Laguerre-Based Finite-Difference Time-Domain Method

Optimized Programs for Shaped Conductive Backfill Material of Grounding Systems Based on the FDTD Simulations

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Design of low-leakage multi-port SRAM for register file in graphics processing unit

Relaxing CFL limit of FDTD by DWT

An Improved Time-Reversal-Based Target Localization for Through-Wall Microwave Imaging

Analysis of femtosecond optical pulse propagation in one-dimensional nonlinear photonic crystals using finite-difference time-domain method

In the zone

Digital noise spectroscopy system and its application to solar cells

High-performance MoS<inf>2</inf> field-effect transistors enabled by chloride doping: Record low contact resistance (0.5 k&#x03A9;&#x00B7;&#x00B5;m) and record high drain current (460 &#x00B5;A/&#x00B5;m)

Fast Analysis of Reverberation Chamber Using FDTD Method and Matrix Pencil Method With New Criterion for Determining the Number of Exponentially Damped Sinusoids

A New Efficient Algorithm for 3-D Laguerre-Based Finite-Difference Time-Domain Method

Optimized Programs for Shaped Conductive Backfill Material of Grounding Systems Based on the FDTD Simulations

High-performance MoS<inf>2</inf> field-effect transistors enabled by chloride doping: Record low contact resistance (0.5 kΩ·µm) and record high drain current (460 µA/µm)