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Microwave FM / AM signal separator: Design and analysis

Type: Conference Paper

Author : Chattopadhyay, T. , Bhattacharyya, P.

Year: 2014

Self-assembly of different graphene-modified morphologies of TiO<sub>2</sub>: nanoparticle, nanorod and nanowire for bisphenol-A photodecomposition

Type: Journal Paper

Author : Zulin Hua; Xiaoyuan Zhang; Xue Bai; Wenqiang Ma; Lu Yu; Zhangyan Dai; Li Gu

Publisher: IET

Year: 2014

Optimal fault detection in stochastic Boolean regulatory networks

Type: Conference Paper

Author : Bahadorinejad, Arghavan; Braga-Neto, Ulisses

Publisher: IEEE

Year: 2014

Investigation on Switching Energy Losses in Reversely Switched Dynistor

Type: Journal Paper

Author : Haiyang Wang; Xiaoping He; Weiqing Chen; Linshen Xie; Jingzhi Zhou; Binjie Xue; Fan Guo; Guowei Zhang; Zhiqiang Chen; Zhengzhong Zeng

Publisher: IEEE

Year: 2014

Analytical Modeling of Industrial-Related Silicon Solar Cells

Type: Journal Paper

Author : Fellmeth, Tobias; Clement, Florian; Biro, Daniel

Publisher: IEEE

Year: 2014

Suppression of Hole Overflow and Enhancement of Light Emission Efficiency in Si Quantum Dots Based Silicon Nitride Light Emitting Diodes

Type: Journal Paper

Author : Rui Huang; Zewen Lin; Zhenxu Lin; Chao Song; Xiang Wang; Yanqing Guo; Jie Song

Publisher: IEEE

Year: 2014

Can Transient Phenomena Help Improving Time Resolution in Scintillators?

Type: Journal Paper

Author : Lecoq, P.; Korzhik, Mikhael; Vasiliev, A.

Publisher: IEEE

Year: 2014

Spectral and Injection Level Dependence of Recombination Lifetimes in Silicon Measured by Impedance Spectroscopy

Type: Journal Paper

Author : Kumar, Sudhakar; Vandana; Rauthan, C.M.S.; Kaul, V.K.; Singh, S.N.; Singh, Praveen Kumar

Publisher: IEEE

Year: 2014

Electroluminescence Devices Based on Si Quantum Dots/SiC Multilayers Embedded in PN Junction

Type: Journal Paper

Author : Xu, Xin; Cao, Y.Q.; Lu, Pingping; Xu, Jie; Li, Wenyuan; Chen, Kevin J.

Publisher: IEEE

Year: 2014

All-Optical Data Inverter Based on Free-Carrier Absorption Induced Cross-Gain Modulation in Si Quantum Dot Doped SiO<formula formulatype="inline"> <img src="/images/tex/19252.gif" alt="_{bm x}"> </formula> Waveguide

Type: Journal Paper

Author : Chung-Lun Wu; Sheng-Pin Su; Gong-Ru Lin

Publisher: IEEE

Year: 2014

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Microwave FM / AM signal separator: Design and analysis

Self-assembly of different graphene-modified morphologies of TiO<sub>2</sub>: nanoparticle, nanorod and nanowire for bisphenol-A photodecomposition

Optimal fault detection in stochastic Boolean regulatory networks

Investigation on Switching Energy Losses in Reversely Switched Dynistor

Analytical Modeling of Industrial-Related Silicon Solar Cells

Suppression of Hole Overflow and Enhancement of Light Emission Efficiency in Si Quantum Dots Based Silicon Nitride Light Emitting Diodes

Can Transient Phenomena Help Improving Time Resolution in Scintillators?

Spectral and Injection Level Dependence of Recombination Lifetimes in Silicon Measured by Impedance Spectroscopy

Electroluminescence Devices Based on Si Quantum Dots/SiC Multilayers Embedded in PN Junction

All-Optical Data Inverter Based on Free-Carrier Absorption Induced Cross-Gain Modulation in Si Quantum Dot Doped SiO<formula formulatype="inline"> <img src="/images/tex/19252.gif" alt="_{bm x}"> </formula> Waveguide

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Microwave FM / AM signal separator: Design and analysis

Self-assembly of different graphene-modified morphologies of TiO<sub>2</sub>: nanoparticle, nanorod and nanowire for bisphenol-A photodecomposition

Optimal fault detection in stochastic Boolean regulatory networks

Investigation on Switching Energy Losses in Reversely Switched Dynistor

Analytical Modeling of Industrial-Related Silicon Solar Cells

Suppression of Hole Overflow and Enhancement of Light Emission Efficiency in Si Quantum Dots Based Silicon Nitride Light Emitting Diodes

Can Transient Phenomena Help Improving Time Resolution in Scintillators?

Spectral and Injection Level Dependence of Recombination Lifetimes in Silicon Measured by Impedance Spectroscopy

Electroluminescence Devices Based on Si Quantum Dots/SiC Multilayers Embedded in PN Junction

All-Optical Data Inverter Based on Free-Carrier Absorption Induced Cross-Gain Modulation in Si Quantum Dot Doped SiO<formula formulatype="inline"> <img src="/images/tex/19252.gif" alt="_{bm x}"> </formula> Waveguide