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RISTwo-Dimensional Analytical Modeling of Fully Depleted Short-Channel Dual-Gate Silico-on-Insulator Metal Oxide Semiconductor Field Effect Transistor
سال: 2009
خلاصه:
In this paper, a two-dimensional (2D) analytical model of the surface potential variation along the channel in a fully depleted dual-gate (DG) silicon-on-insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) is proposed...
Reduction of Negative Bias and Light Instability of a-IGZO TFTs by Dual-Gate Driving
ناشر: IEEE
سال: 2014
High-Speed Dual-Gate a-IGZO TFT-Based Circuits With Top-Gate Offset Structure
ناشر: IEEE
سال: 2014