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    Degradations of Threshold Voltage, Mobility, and Drain Current and the Dependence on Transistor Geometry For Stressing at 77 K and 300 K 

    Type: Journal Paper
    Author : Guoying Wu; Deptuch, Grzegorz W.; Hoff, Jim R.; Ping Gui
    Publisher: IEEE
    Year: 2014

    AlN/AlGaN HEMTs on AlN substrate for stable high-temperature operation 

    Type: Journal Paper
    Author : Yafune, N.; Hashimoto, Shuji; Akita, K.; Yamamoto, Yusaku; Tokuda, Hirokuni; Kuzuhara, Masaaki
    Publisher: IET
    Year: 2014

    Linear Drain Current Degradation of FG-pLEDMOS Transistor Under Pulse Gate Stress With Different Rising and Falling Edges 

    Type: Journal Paper
    Author : Qinsong Qian; Tingting Huang; Siyang Liu; Weifeng Sun; Wei Su; Aijun Zhang; Shaorong Wang; Shulang Ma
    Publisher: IEEE
    Year: 2014

    Systematic layout planning in human-sytem interface An evaluation of alarm displays with spatial proximity for accidents diagnosis of advanced nuclear power plant 

    Type: Conference Paper
    Author : Kang-Hung Liu , Sheue-Ling Hwang
    Publisher: IEEE
    Year: 2014

    Substrate-Coupled Cross-Talk Effects on an AlGaN/GaN-on-Si Smart Power IC Platform 

    Type: Journal Paper
    Author : Qimeng Jiang; Zhikai Tang; Chunhua Zhou; Shu Yang; Chen, Kevin J.
    Publisher: IEEE
    Year: 2014

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