This paper focuses on the extraction of drain/source resistance and effective channel length (Leff) of the

silicon MOSFET in the linear drain current region. Leff is expressed as a function of drain/source resistance, ...

Effect of LiNbO3 ferroelectric substrate on the carrier mobility in top gated graphene field-effect

transistors (G-FETs) is demonstrated. It is shown that, at the same residual concentration of the

charge carriers, the mobility...

In this paper an extended drain-current conductance method is introduced, which can be used for extraction of separated drain and source resistors, forward and reversed modes carrier mobilities and effective channel length of MOSFET. The new single...