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نمایش تعداد 1-3 از 3

The effect of barrier composition on quantum dot solar cell performance

نوع: Conference Paper

نویسنده : Forbes, D.V.; Yushuai Dai; Polly, S.J.; Hellstroem, S.; Bailey, C.; Hubbard, S.M.

ناشر: IEEE

سال: 2014

Single-Event Transient Response of InGaAs MOSFETs

نوع: Journal Paper

نویسنده : Kai Ni; En Xia Zhang; Hooten, N.C.; Bennett, W.G.; McCurdy, Michael W.; Sternberg, A.L.; Schrimpf, R.D.; Reed, R.A.; Fleetwood, D.M.; Alles, Michael L.; Tae-Woo Kim; Jianqiang Lin; del Alamo, Jesus /A/.

ناشر: IEEE

سال: 2014

Effect of Fringing Capacitances on the RF Performance of GaN HEMTs With T-Gates

نوع: Journal Paper

نویسنده : Bo Song; Sensale-Rodriguez, Berardi; Ronghua Wang; Jia Guo; Zongyang Hu; Yuanzheng Yue; Faria, Frederico; Schuette, Michael; Ketterson, Andrew; Beam, Edward; Saunier, Paul; Xiang Gao; Shiping Guo; Fay, Patrick; Jena, D.; Xing, Huili Grace

ناشر: IEEE

سال: 2014

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The effect of barrier composition on quantum dot solar cell performance

Single-Event Transient Response of InGaAs MOSFETs

Effect of Fringing Capacitances on the RF Performance of GaN HEMTs With T-Gates

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The effect of barrier composition on quantum dot solar cell performance

Single-Event Transient Response of InGaAs MOSFETs

Effect of Fringing Capacitances on the RF Performance of GaN HEMTs With T-Gates