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نمایش تعداد 1-10 از 12

Effect of traps on transient bit-line current behavior in word-line stacked nand flash memory with poly-Si body

نوع: Conference Paper

ناشر: IEEE

سال: 2014

Lack of triangularity in SAR interferometric phases

نوع: Conference Paper

ناشر: IEEE

سال: 2014

Reviewers

نوع: Conference Paper

ناشر: IEEE

سال: 2014

Individual and Collective Trade-Offs in Small World Decisions

نوع: Conference Paper

نویسنده : Sen, P. , Ma Nang Laik

ناشر: IEEE

سال: 2014

Analysis of mechanical properties of LTCC substrates

نوع: Conference Paper

نویسنده : Lukacs, P. , Pietrikova, A. , Livovsky, L.

ناشر: IEEE

سال: 2014

Concurrent image query using local random walk with restart on large scale graphs

نوع: Conference Paper

ناشر: IEEE

سال: 2014

Monolithic Single-Pole Sixteen-Throw T/R Switch for Next-Generation Front-End Module

نوع: Journal Paper

نویسنده : Jie Cui; Lei Chen; Yi Liu

ناشر: IEEE

سال: 2014

A Fully Integrated 60-GHz 5-Gb/s QPSK Transceiver With T/R Switch in 65-nm CMOS

نوع: Journal Paper

نویسنده : Lixue Kuang; Xiaobao Yu; Haikun Jia; Lei Chen; Wei Zhu; Meng Wei; Zheng Song; Zhihua Wang; Baoyong Chi

ناشر: IEEE

سال: 2014

A Reconfigurable Dual-Mode CMOS Power Amplifier With Integrated T/R Switch for 0.1–1.5-GHz Multistandard Applications

نوع: Journal Paper

نویسنده : Yun Yin; Baoyong Chi; Zhaokang Xia; Zhihua Wang

ناشر: IEEE

سال: 2014

A Dual-Band SP6T T/R Switch in SOI CMOS With 37-dBm <formula formulatype="inline"> <img src="/images/tex/21420.gif" alt="{ P}_{-0.1 {\\rm {dB}}}"> </formula> for GSM/W-CDMA Handsets

نوع: Journal Paper

نویسنده : Wang, X. Shawn; Yue, C. Patrick

ناشر: IEEE

سال: 2014

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Effect of traps on transient bit-line current behavior in word-line stacked nand flash memory with poly-Si body

Lack of triangularity in SAR interferometric phases

Reviewers

Individual and Collective Trade-Offs in Small World Decisions

Analysis of mechanical properties of LTCC substrates

Concurrent image query using local random walk with restart on large scale graphs

Monolithic Single-Pole Sixteen-Throw T/R Switch for Next-Generation Front-End Module

A Fully Integrated 60-GHz 5-Gb/s QPSK Transceiver With T/R Switch in 65-nm CMOS

A Reconfigurable Dual-Mode CMOS Power Amplifier With Integrated T/R Switch for 0.1–1.5-GHz Multistandard Applications

A Dual-Band SP6T T/R Switch in SOI CMOS With 37-dBm <formula formulatype="inline"> <img src="/images/tex/21420.gif" alt="{ P}_{-0.1 {\\rm {dB}}}"> </formula> for GSM/W-CDMA Handsets

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Effect of traps on transient bit-line current behavior in word-line stacked nand flash memory with poly-Si body

Lack of triangularity in SAR interferometric phases

Reviewers

Individual and Collective Trade-Offs in Small World Decisions

Analysis of mechanical properties of LTCC substrates

Concurrent image query using local random walk with restart on large scale graphs

Monolithic Single-Pole Sixteen-Throw T/R Switch for Next-Generation Front-End Module

A Fully Integrated 60-GHz 5-Gb/s QPSK Transceiver With T/R Switch in 65-nm CMOS

A Reconfigurable Dual-Mode CMOS Power Amplifier With Integrated T/R Switch for 0.1&#x2013;1.5-GHz Multistandard Applications

A Dual-Band SP6T T/R Switch in SOI CMOS With 37-dBm <formula formulatype="inline"> <img src="/images/tex/21420.gif" alt="{ P}_{-0.1 {\\rm {dB}}}"> </formula> for GSM/W-CDMA Handsets

A Reconfigurable Dual-Mode CMOS Power Amplifier With Integrated T/R Switch for 0.1–1.5-GHz Multistandard Applications