Within-die process variation is increasing in nanometer-scale process technologies. We observe that the same SRAM cell leaks differently under within-die process variations when storing 0 compared to 1; this difference can ...

simulations in 90nm, 65nm and 45nm PTM (Predictive Technology Model) technologies show great improvements of the proposed adder with respect to other structures in term of static power consumption....

with the goal to reduce

the static power consumption. The design has been simulated and evaluated using the 65

nm PTM models....