A dual material gate structure for a 4H-SiC MOSFET have been proposed as a possible way to reduce short channel effects such as DIBL, hot electron effects, and high electric fields. The gate of the DMG

(Dual Material Gate) 4H-SiC MOSFET...

In this paper we propose a new dual gate SOI-MOSFET in order to reduce short-channel effects (SCEs). In the proposed structure, the bias of the second gate which is near the drain is dependent on the drain voltage. To investigate transistor...

and thicknesses, but with different doping levels. Changes that occur in the breakdown voltage, DC trans-conductance, drain current, gate-source capacitance, cut off frequency, and short channel effect as a function of different source side (NSS) and drain side...

This is the first report of novel structures designated as recessed p-buffer (RPB) silicon carbide (SiC) metal semiconductor field effect transistors (MESFETs). Important parameters suchas gate–source capacitance, short channel effect, DC trans...

, and the channel is recessed into the p-buffer layer

at the source and/or the drain side. Important parameters such as

short channel effect, maximum DC trans-conductance (gm), drain

current, breakdown voltage and output resistance...